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arXiv · 2207.07152

Simultaneous imaging of dopants and free charge carriers by STEM-EELS

Hongbin Yang·Andrea Konečná·Xianghan Xu·Sang-Wook Cheong·Philip E. Batson·F. Javier García de Abajo·Eric Garfunkel
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Abstract

Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high-enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By analyzing both high- and low-energy excitations in EELS, we reveal chemical and electronic inhomogeneities within a single BLSO nanocrystal. The inhomogeneous doping leads to distinctive localized infrared surface plasmons, including a novel plasmon mode that is highly confined between high- and low-doping regions. We further quantify the carrier density, effective mass, and dopant activation percentage from EELS data and transport measurements on the bulk single crystals of BLSO. These results represent a unique way of studying heterogeneities in solids, understanding structure-property relationships at the nanoscale, and opening the way to leveraging nanoscale doping texture in the design of nanophotonic devices.

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Hongbin Yang, Andrea Konečná, Xianghan Xu, Sang-Wook Cheong, Philip E. Batson, F. Javier García de Abajo, Eric Garfunkel. 2022-07-14. Simultaneous imaging of dopants and free charge carriers by STEM-EELS. https://arxiv.org/abs/2207.07152

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