arXiv subjects

Gang Luo

Publications and source records attributed to Gang Luo.

29 records · Page 2Linked to original sources

arXiv2020

Low-Cost Anti-Copying 2D Barcode by Exploiting Channel Noise Characteristics

In this paper, for overcoming the drawbacks of the prior approaches, such as low generality, high cost, and high overhead, we propose a Low-Cost Anti-Copying (LCAC) 2D barcode by exploiting the difference between the noise characteristics of legal and illegal channels. An embedding strategy is proposed, and for a variant of it, we also make the corresponding analysis. For accurately evaluating the performance of our approach, a theoretical model of the noise in an illegal channel is established by using a generalized Gaussian distribution. By comparing with the experimental results based on various printers, scanners, and a mobile phone, it can be found that the sample histogram and curve fitting of the theoretical model match well, so it can be concluded that the theoretical model works well. For evaluating the security of the proposed LCAC code, besides the direct-copying (DC) attack, the improved version, which is the synthesized-copying (SC) attack, is also considered in this paper. Based on the theoretical model, we build a prediction function to optimize the parameters of our approach. The parameters optimization incorporates the covertness requirement, the robustness requirement and a tradeoff between the production cost and the cost of illegally-copying attacks together. The experimental results show that the proposed LCAC code with two printers and two scanners can detect the DC attack effectively and resist the SC attack up to the access of 14 legal copies.

cs.CR↗

arXiv2019

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 ${\mu}$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9{\deg} from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180{\deg} periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 ${\mu}$eV.

cond-mat.mes-hall↗

arXiv2019

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

cond-mat.mes-hall↗

arXiv2019

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.

cond-mat.mes-hall↗

arXiv2018

Progressive Sampling-Based Bayesian Optimization for Efficient and Automatic Machine Learning Model Selection

Purpose: Machine learning is broadly used for clinical data analysis. Before training a model, a machine learning algorithm must be selected. Also, the values of one or more model parameters termed hyper-parameters must be set. Selecting algorithms and hyper-parameter values requires advanced machine learning knowledge and many labor-intensive manual iterations. To lower the bar to machine learning, miscellaneous automatic selection methods for algorithms and/or hyper-parameter values have been proposed. Existing automatic selection methods are inefficient on large data sets. This poses a challenge for using machine learning in the clinical big data era. Methods: To address the challenge, this paper presents progressive sampling-based Bayesian optimization, an efficient and automatic selection method for both algorithms and hyper-parameter values. Results: We report an implementation of the method. We show that compared to a state of the art automatic selection method, our method can significantly reduce search time, classification error rate, and standard deviation of error rate due to randomization. Conclusions: This is major progress towards enabling fast turnaround in identifying high-quality solutions required by many machine learning-based clinical data analysis tasks.

cs.LG↗

arXiv2018

Automatically Explaining Machine Learning Prediction Results: A Demonstration on Type 2 Diabetes Risk Prediction

Background: Predictive modeling is a key component of solutions to many healthcare problems. Among all predictive modeling approaches, machine learning methods often achieve the highest prediction accuracy, but suffer from a long-standing open problem precluding their widespread use in healthcare. Most machine learning models give no explanation for their prediction results, whereas interpretability is essential for a predictive model to be adopted in typical healthcare settings. Methods: This paper presents the first complete method for automatically explaining results for any machine learning predictive model without degrading accuracy. We did a computer coding implementation of the method. Using the electronic medical record data set from the Practice Fusion diabetes classification competition containing patient records from all 50 states in the United States, we demonstrated the method on predicting type 2 diabetes diagnosis within the next year. Results: For the champion machine learning model of the competition, our method explained prediction results for 87.4% of patients who were correctly predicted by the model to have type 2 diabetes diagnosis within the next year. Conclusions: Our demonstration showed the feasibility of automatically explaining results for any machine learning predictive model without degrading accuracy.

cs.LG↗

arXiv2018

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments.

cond-mat.mes-hall↗

arXiv2017

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

cond-mat.mes-hall↗

arXiv2017

Coupling graphene nanomechanical motion to a single-electron transistor

Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion and charge transport has not been explored in graphene. Here, we studied the mechanical properties of a suspended 50-nm-wide graphene nanoribbon, which also acts as a single-electron transistor (SET) at low temperature. Using the SET as a sensitive detector, we found that the resonance frequency could be tuned from 82 MHz to 100 MHz and the quality factor exceeded 30000. The strong charge-mechanical coupling was demonstrated by observing the SET induced ~140 kHz resonance frequency shifts and mechanical damping. We also found that the SET can enhance the nonlinearity of the resonator. Our SET-coupled graphene mechanical resonator could approach an ultra-sensitive mass resolution of ~0.55*10^(-21) g and a force sensitivity of ~1.9*10^(-19) N/(Hz)^(1/2), and can be further improved. These properties indicate that our device is a good platform both for fundamental physical studies and potential applications.

cond-mat.mes-hall↗

arXiv2016

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

cond-mat.mes-hall↗

arXiv2013

Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates

Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene nano-structures hinder the ability to control the inter-dot tunnel coupling, tc,the most important property of the artificial molecule. Here we report measurements of tc in an all-metal-gates-tuned graphene DQD. We find that tc can be controlled continuously about a factor of four by employing a single gate. Furthermore, tc, can be changed monotonically about another factor of four as electrons are gate-pumped into the dot one by one. The results suggest that the strength of tunnel coupling in etched DQDs can be varied in a rather broad range and in a controllable manner, which improves the outlook to use graphene as a base material for qubit applications.

cond-mat.mes-hall↗