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arXiv · 1912.08365

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

Xin Zhang·Rui-Zi Hu·Hai-Ou Li·Fang-Ming Jing·Yuan Zhou·Rong-Long Ma·Ming Ni·Gang Luo·Gang Cao·Gui-Lei Wang·Xuedong Hu·Hong-Wen Jiang·Guang-Can Guo·Guo-Ping Guo
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Abstract

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 ${\mu}$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9{\deg} from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180{\deg} periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 ${\mu}$eV.

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Xin Zhang, Rui-Zi Hu, Hai-Ou Li, Fang-Ming Jing, Yuan Zhou, Rong-Long Ma, Ming Ni, Gang Luo, Gang Cao, Gui-Lei Wang, Xuedong Hu, Hong-Wen Jiang, Guang-Can Guo, Guo-Ping Guo. 2019-12-18. Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot. https://doi.org/10.1103/physrevlett.124.257701

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