arXiv subjects

Gabriel Undeutsch

Publications and source records attributed to Gabriel Undeutsch.

10 recordsLinked to original sources

arXiv2026

Planar metal-semiconductor Yagi-Uda type antennas for tunable narrow-linewidth quantum dot emitters

Tunable photonic architectures that improve the extraction efficiency of light from embedded epitaxial quantum dots across a wide spectral range are key enablers for developing bright sources of single and indistinguishable photons. In this study, we experimentally demonstrate planar multilayer antenna structures consisting of epitaxially grown AlGaAs and InGaAs membranes containing quantum dots sandwiched between metallic Au (or Ag) reflector and director layers together with Al$_2$O$_3$ spacer layers. We show that the linewidths and fine-structure splitting of the neutral exciton emission remain comparable to those measured in the corresponding unprocessed samples, demonstrating that the fabrication process preserves the optical quality of the emitters. In addition to broadband operation, we demonstrate that the planar architecture is compatible with electrical tuning via integrated diode structures, and strain tuning using piezoelectric actuators. In spite of limitations related to optical losses in the ultrathin metallic layers, the demonstrated fabrication simplicity, scalability, and compatibility with tunable quantum emitters establish planar antennas as a promising platform for solid-state quantum photonic devices.

physics.optics↗

arXiv2026

Towards Stirling cooler operable single-photon sources based on low-noise GaAs quantum dots

For photonic quantum technology applications, sources capable of emitting photons with indistinguishability close to unity are essential. Ideally, these sources should not require demanding cooling systems. Here, we present temperature-dependent two-photon-interference measurements on photons produced by the radiative decay of the negative trion in a low-noise GaAs quantum dot, which are in quantitative agreement with theoretical calculations accounting for carrier-phonon interactions and coupling to excited states. While at at the lowest explored temperatures the emission linewidth reaches values only 6(2) % above the Fourier limit and the indistinguishability I between subsequently emitted photons reaches 0.966(6), the latter drops to 0.05(4) at 55 K. We show that this loss can be explained with the coupling with energetically close excited trion states and suggest that the photon indistinguishability at elevated temperatures can be increased by employing Purcell enhancement of the emission rate or by increasing the energy separation of the excited states. Using cavity-enhanced emission, we experimentally verify the first route and demonstrate an improvement in photon indistinguishability from 0.314(25) to 0.80(3) at 32 K, which - to our knowledge - is the highest reported value at such temperature.

quant-ph↗

arXiv2026

A diode nanocavity for fast, efficient and tunable emission of highly entangled photon pairs and Fourier-transform-limited single photons

Deterministic sources of entangled photon pairs and indistinguishable photons are expected to play a key role in photonic quantum technologies. Semiconductor quantum dots are promising candidates due to their on-demand emission and compatibility with nanophotonic structures. However, current implementations face trade-offs between extraction efficiency, Purcell enhancement, as well as charge noise that causes blinking and degrades indistinguishability. Here we demonstrate a tunable nano-optoelectronic device based on a quantum dot embedded in a p-i-n diode circular-Bragg-grating-resonator and featuring extraction efficiencies up to 0.55(6) and Purcell-factor of $\sim$8. The device generates wavelength-tunable entangled photon pairs with suppressed blinking and raw (corrected) concurrence > 0.89 (0.91) over a range of 1.6 nm. The very same source also emits single, nearly Fourier-limited and highly indistinguishable photons with raw (corrected) $\mathcal{V}_{\text{HOM}}$ = 0.951(4) (0.988(6)). These results demonstrate a viable platform for semiconductor quantum photonics.

quant-ph↗

arXiv2025

Low-density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes

Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has allowed the growth of almost strain-free QDs, with low and controllable surface densities, small excitonic fine structure splitting (FSS), and fast radiative decays. Here, we extend the local droplet etching technique to In(Ga)As QDs in AlGaAs, thereby increasing the achievable emission wavelength range beyond that accessible to GaAs/AlGaAs QDs, while benefiting from the aforementioned advantages of this growth method. We observe QD densities of $\sim 0.2\ \mu\mathrm{m}^{-2}$, FSS values as small as $3\ \mu\mathrm{eV}$, and short radiative lifetimes of $\sim 300\ \mathrm{ps}$, while extending the achievable emission range to $\sim 920\ \mathrm{nm}$ at cryogenic temperatures. We envision these QDs to be particularly suitable for integrated quantum photonics applications.

physics.app-ph↗

arXiv2025

Electric-field control of photon indistinguishability in cascaded decays in quantum dots

Photon indistinguishability, entanglement, and antibunching are key ingredients in quantum optics and photonics. Decay cascades in quantum emitters offer a simple method to create entangled photon-pairs with negligible multi-pair generation probability. However, the degree of indistinguishability of the photons emitted in a cascade is intrinsically limited by the lifetime ratio of the involved transitions. Here we show that, for the biexciton-exciton cascade in a quantum dot, this ratio can be widely tuned by an applied electric field. Hong-Ou-Mandel interference measurements of two subsequently emitted biexciton photons show that their indistinguishability increases with increasing field, following the theoretically predicted behavior. At the same time, the emission linewidth stays close to the transform-limit, favoring applications relying on the interference among photons emitted by different sources.

quant-ph↗

arXiv2025

Passive Demultiplexed Two-photon State Generation from a Quantum Dot

High-purity multi-photon states are essential for photonic quantum computing. Among existing platforms, semiconductor quantum dots offer a promising route to scalable and deterministic multi-photon state generation. However, to fully realize their potential we require a suitable optical excitation method. Current approaches of multi-photon generation rely on active polarization-switching elements (e.g., electro-optic modulators, EOMs) to spatio-temporally demultiplex single photons. Yet, the achievable multi-photon rate is fundamentally limited by the switching speed of the EOM. Here, we introduce a fully passive demultiplexing technique that leverages a stimulated two-photon excitation process to achieve switching rates that are only limited by the quantum dot lifetime. We demonstrate this method by generating two-photon states from a single quantum dot without requiring any active switching elements. Our approach significantly reduces the cost of demultiplexing while shifting it to the excitation stage, enabling loss-free demultiplexing and effectively doubling the achievable multi-photon generation rate when combined with existing active demultiplexing techniques.

quant-ph↗

arXiv2023

Post-fabrication tuning of circular Bragg resonators for enhanced emitter-cavity coupling

Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial spectral mismatch can be corrected after device fabrication by repeated wet chemical etching steps. We demonstrate ~16 nm wavelength tuning for optical modes in AlGaAs resonators on oxide, leading to a 4-fold Purcell enhancement of the emission of single embedded GaAs quantum dots. Numerical calculations reproduce the observations and suggest that the achievable performance of the resonator is only marginally affected in the explored tuning range. We expect the method to be applicable also to circular Bragg resonators based on other material platforms, thus increasing the device yield of cavity-enhanced solid-state quantum emitters.

quant-ph↗

arXiv2023

Hyperfine-interaction limits polarization entanglement of photons from semiconductor quantum dots

Excitons in quantum dots are excellent sources of polarization-entangled photon pairs, but a quantitative understanding of their interaction with the nuclear spin bath is still missing. Here we investigate the role of hyperfine energy shifts using experimentally accessible parameters and derive an upper limit to the achievable entanglement fidelity. Our results are consistent with all available literature, indicate that spin-noise is often the dominant process limiting the entanglement in InGaAs quantum dots, and suggest routes to alleviate its effect.

quant-ph↗

arXiv2022

Beyond the four-level model: Dark and hot states in quantum dots degrade photonic entanglement

Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers. Here we study the polarization entanglement among photon pairs from the biexciton-exciton cascade in GaAs quantum dots at temperatures up to 65 K. We observe entanglement degradation accompanied by changes in decay dynamics, which we ascribe to thermal population and depopulation of hot and dark states in addition to the four levels relevant for photon pair generation. Detailed calculations considering the presence and characteristics of the additional states and phonon-assisted transitions support the interpretation. We expect these results to guide the optimization of quantum dots as sources of highly entangled photons at elevated temperatures.

quant-ph↗

arXiv2021

GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication, such as entanglement swapping and quantum key distribution.

quant-ph↗