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arXiv · 2109.01507

GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

Saimon Filipe Covre da Silva·Gabriel Undeutsch·Barbara Lehner·Santanu Manna·Tobias M. Krieger·Marcus Reindl·Christian Schimpf·Rinaldo Trotta·Armando Rastelli
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Abstract

This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication, such as entanglement swapping and quantum key distribution.

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Saimon Filipe Covre da Silva, Gabriel Undeutsch, Barbara Lehner, Santanu Manna, Tobias M. Krieger, Marcus Reindl, Christian Schimpf, Rinaldo Trotta, Armando Rastelli. 2021-09-03. GaAs quantum dots grown by droplet etching epitaxy as quantum light sources. https://doi.org/10.1063/5.0057070

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