arXiv subjects

G. Lafferty

Publications and source records attributed to G. Lafferty.

3 recordsLinked to original sources

arXiv2018

Mapping the material in the LHCb vertex locator using secondary hadronic interactions

Precise knowledge of the location of the material in the LHCb vertex locator (VELO) is essential to reducing background in searches for long-lived exotic particles, and in identifying jets that originate from beauty and charm quarks. Secondary interactions of hadrons produced in beam-gas collisions are used to map the location of material in the VELO. Using this material map, along with properties of a reconstructed secondary vertex and its constituent tracks, a $p$-value can be assigned to the hypothesis that the secondary vertex originates from a material interaction. A validation of this procedure is presented using photon conversions to dimuons.

physics.ins-det↗

arXiv2014

Performance of the LHCb Vertex Locator

The Vertex Locator (VELO) is a silicon microstrip detector that surrounds the proton-proton interaction region in the LHCb experiment. The performance of the detector during the first years of its physics operation is reviewed. The system is operated in vacuum, uses a bi-phase CO2 cooling system, and the sensors are moved to 7 mm from the LHC beam for physics data taking. The performance and stability of these characteristic features of the detector are described, and details of the material budget are given. The calibration of the timing and the data processing algorithms that are implemented in FPGAs are described. The system performance is fully characterised. The sensors have a signal to noise ratio of approximately 20 and a best hit resolution of 4 microns is achieved at the optimal track angle. The typical detector occupancy for minimum bias events in standard operating conditions in 2011 is around 0.5%, and the detector has less than 1% of faulty strips. The proximity of the detector to the beam means that the inner regions of the n+-on-n sensors have undergone space-charge sign inversion due to radiation damage. The VELO performance parameters that drive the experiment's physics sensitivity are also given. The track finding efficiency of the VELO is typically above 98% and the modules have been aligned to a precision of 1 micron for translations in the plane transverse to the beam. A primary vertex resolution of 13 microns in the transverse plane and 71 microns along the beam axis is achieved for vertices with 25 tracks. An impact parameter resolution of less than 35 microns is achieved for particles with transverse momentum greater than 1 GeV/c.

physics.ins-det↗

arXiv2013

Radiation damage in the LHCb Vertex Locator

The LHCb Vertex Locator (VELO) is a silicon strip detector designed to reconstruct charged particle trajectories and vertices produced at the LHCb interaction region. During the first two years of data collection, the 84 VELO sensors have been exposed to a range of fluences up to a maximum value of approximately $\rm{45 \times 10^{12}\,1\,MeV}$ neutron equivalent ($\rm{1\,MeV\,n_{eq}}$). At the operational sensor temperature of approximately $-7\,^{\circ}\rm{C}$, the average rate of sensor current increase is $18\,\upmu\rm{A}$ per $\rm{fb^{-1}}$, in excellent agreement with predictions. The silicon effective bandgap has been determined using current versus temperature scan data after irradiation, with an average value of $E_{g}=1.16\pm0.03\pm0.04\,\rm{eV}$ obtained. The first observation of n-on-n sensor type inversion at the LHC has been made, occurring at a fluence of around $15 \times 10 ^{12}$ of $1\,\rm{MeV\,n_{eq}}$. The only n-on-p sensors in use at the LHC have also been studied. With an initial fluence of approximately $\rm{3 \times 10^{12}\,1\,MeV\,n_{eq}}$, a decrease in the Effective Depletion Voltage (EDV) of around 25\,V is observed, attributed to oxygen induced removal of boron interstitial sites. Following this initial decrease, the EDV increases at a comparable rate to the type inverted n-on-n type sensors, with rates of $(1.43\pm 0.16) \times 10 ^{-12}\,\rm{V} / \, 1 \, \rm{MeV\,n_{eq}}$ and $(1.35\pm 0.25) \times 10 ^{-12}\,\rm{V} / \, 1 \, \rm{MeV\,n_{eq}}$ measured for n-on-p and n-on-n type sensors, respectively. A reduction in the charge collection efficiency due to an unexpected effect involving the second metal layer readout lines is observed.

physics.ins-det↗