arXiv subjects

F. Stavale

Publications and source records attributed to F. Stavale.

7 recordsLinked to original sources

arXiv2026

Co-adsorption mechanism drives CO oxidation on defective ZnS

Reactivity on wide-bandgap semiconductor surfaces relies critically on the generation of active sites. In the case of CO oxidation, however, the mere presence of defects is insufficient to drive reactivity. Here, we investigate CO oxidation on a defective ZnS single-crystal surface by combining near ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) and density functional theory (DFT) calculations. NAP-XPS measurements reveal CO$_2$-like surface intermediates only under oxygen-rich conditions, consistent with oxygen-assisted CO oxidation. DFT calculations support an oxygen-assisted co-adsorption pathway in which CO interacts preferentially with adsorbed oxygen species stabilized near Zn-deficient sites, forming weakly bound CO$_2$-like structures. These results identify oxygen coverage, rather than defect density alone, as the key factor controlling CO$_2$-like intermediate formation on defective ZnS and establish defective ZnS as a model platform for studying oxygen-assisted surface chemistry on non-oxide semiconductors.

cond-mat.mtrl-sci↗

arXiv2026

Insights into $CO_{2}$ activation on defective ZnS surfaces

In this work, we investigate $CO_{2}$ activation on ZnS using Near Ambient-Pressure X-ray photoelectron spectroscopy measurements (NAP-XPS) and density functional theory calculations (DFT). Our NAP-XPS experiments reveal that $CO_{2}$ adsorbs onto a defective ZnS surface upon heating above $473 \ K$ in a $CO_{2}$ atmosphere (up to $0.55 \ mbar$). The $CO_{2}$ adsorption fingerprint is detectable even after cooling to room temperature under ultra-high vacuum. Our DFT calculations suggest that $CO_{2}$ adsorption is energetically favorable on ZnS surfaces containing zinc vacancies, highlighting defect sites as key adsorption centers. Additionally, oxygen adsorption on a defective ZnS surface is exothermic, in contrast to the endothermic behavior observed on a defect-free surface. These findings contribute to a deeper understanding of defect-driven surface reactivity and may inform ZnS-based catalyst's design for $CO_{2}$ capture and reutilization.

cond-mat.mtrl-sci↗

arXiv2025

In situ growth of a type-II ZnO/ZnS heterostructure:From stability to band-offset

We have successfully obtained a ZnO/ZnS heterostructure by heating a ZnS(001) single crystal in a controlled impurities-free oxygen atmosphere. Combining X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM), we explore the stability, electronic structure, and morphology of that interface. Our XPS measurements reveal a binding energy shift of the core-level peaks, indicating a band-bending effect due to the formation of a hybrid ZnO/ZnS interface. In addition, AFM measurements show that exposure of ZnS single-crystal to an oxygen atmosphere leads to the formation of ZnO/ZnS-like islands. Interestingly, our band-offset estimation suggest a type-II heterostructure arrangement with suitable electronic edges positions that turn ZnO/ZnS heterostructure a promising platform for catalytic applications, particularly hydrogen and oxygen evolution reactions.

cond-mat.mtrl-sci↗

arXiv2025

Formation mechanism, stability and role of zinc and sulfur vacancies on the electronic properties and optical response of ZnS

Combining experimental and theoretical tools, we report that Zn vacanciesplay an important role in the electronic and optical responses of ZnS sphalerite. The defective surface of ZnS (001) single crystal prepared in ultra-highvacuum conditions, has been shown to exhibit a semiconducting character instead of the insulating properties of the pristine structure, as revealed by X-ray photoelectron spectroscopy (XPS). Interestingly, this effect is attributed to the formation of zinc vacancies in the ZnS system, which also alter the optical response of the material, as supported by photoluminescence (PL) measurements comparing pristine and S-rich (Zn-poor) ZnS. To address these findings from a theoretical point of view, first principles calculations based on density functional theory (DFT) were performed. The optical properties of cation-defective ZnS were evaluated using random-phase approximation and hybrid functional DFT calculations. These calculations revealed absorption peaks in the visible range in the defective ZnS rather than solely in the ultra-violet range obtained for defect-free ZnS. The combination of this finding with joint density of states (JDOS) analysis explains the emergence of new luminescence peaks observed in the PL spectra of cation-defective ZnS. These findings highlight the role of Zn vacancies in tuning ZnS optical properties, making it a potential candidate for optoelectronic applications such as LEDs and photodetectors.

cond-mat.mtrl-sci↗

arXiv2017

Training-induced inversion of spontaneous exchange bias field on La1.5Ca0.5CoMnO6

In this work we report the synthesis and structural, electronic and magnetic properties of La1.5Ca0.5CoMnO6 double-perovskite. This is a re-entrant spin cluster material which exhibits a non-negligible negative exchange bias effect when it is cooled in zero magnetic field from an unmagnetized state down to low temperature. X-ray powder diffraction, X-ray photoelectron spectroscopy and magnetometry results indicate mixed valence state at Co site, leading to competing magnetic phases and uncompensated spins at the magnetic interfaces. We compare the results for this Ca-doped material with those reported for the resemblant compound La1.5Sr0.5CoMnO6, and discuss the much smaller spontaneous exchange bias effect observed for the former in terms of its structural and magnetic particularities. For La1.5Ca0.5CoMnO6, when successive magnetization loops are carried, the spontaneous exchange bias field inverts its sign from negative to positive from the first to the second measurement. We discuss this behavior based on the disorder at the magnetic interfaces, related to the presence of a glassy phase. This compound also exhibits a large conventional exchange bias, for which there is no sign inversion of the exchange bias field for consecutive cycles.

cond-mat.mtrl-sci↗

arXiv2016

Compensation temperatures and exchange bias in La1.5Ca0.5CoIrO6

We report on the study of magnetic properties of the La1.5Ca0.5CoIrO6 double perovskite. Via ac magnetic susceptibility we have observed evidence of weak ferromagnetism and reentrant spin glass behavior on an antiferromagnetic matrix. Regarding the magnetic behavior as a function of temperature, we have found that the material displays up to three inversions of its magnetization, depending on the appropriate choice of the applied magnetic field. At low temperature the material exhibit exchange bias effect when it is cooled in the presence of a magnetic field. Also, our results indicate that this effect may be observed even when the system is cooled at zero field. Supported by other measurements and also by electronic structure calculations, we discuss the magnetic reversals and spontaneous exchange bias effect in terms of magnetic phase separation and magnetic frustration of Ir4+ ions located between the antiferromagnetically coupled Co ions.

cond-mat.mtrl-sci↗

arXiv2011

Quantifying defects in graphene via Raman spectroscopy at different excitation energies

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

cond-mat.mtrl-sci↗