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arXiv · 1105.0175

Quantifying defects in graphene via Raman spectroscopy at different excitation energies

L. G. Cançado·A. Jorio·E. H. Martins Ferreira·F. Stavale·C. A. Achete·R. B. Capaz·M. V. O. Moutinho·A. Lombardo·T. Kulmala·A. C. Ferrari
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Abstract

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

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L. G. Cançado, A. Jorio, E. H. Martins Ferreira, F. Stavale, C. A. Achete, R. B. Capaz, M. V. O. Moutinho, A. Lombardo, T. Kulmala, A. C. Ferrari. 2011-05-04. Quantifying defects in graphene via Raman spectroscopy at different excitation energies. https://doi.org/10.1021/nl201432g

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