arXiv subjects

Dimitrie Culcer

Publications and source records attributed to Dimitrie Culcer.

At least 19 recordsLinked to original sources

arXiv2026

Inter-band coherence effects in disordered crystals: beyond the non-crossing approximation

We develop a quantum kinetic theory for Bloch electrons driven by a uniform dc electric field, extending the nonequilibrium density-matrix formalism beyond the non-crossing approximation. This extension is required to capture steady-state terms that are nominally zeroth order in disorder strength and compete with intrinsic band-geometric responses, as in anomalous Hall and related spin, orbital, and valley transport. Working in the length gauge with Gaussian white-noise disorder, we include impurity scattering to fourth order in the disorder potential. An iterative solution for the impurity-induced density-matrix fluctuations yields a connected $V^4$ collision integral after subtracting disconnected impurity pairings, thereby avoiding double counting. The resulting terms separate into self-energy corrections, ladder-type vertex renormalization, and crossed quantum-interference contributions. We clarify the correspondence between this density-matrix kinetic equation and the Keldysh formalism, and decompose the response into Fermi-surface and Fermi-sea components. As an application, we study the two-dimensional massive Dirac fermion model. We obtain analytical expressions for the single-particle lifetime, transport relaxation time, and longitudinal conductivity at the Born level, and then evaluate the anomalous Hall conductivity including crossed impurity processes. These processes generate an extrinsic contribution of order $\tau^0$ that coexists with the intrinsic Berry-curvature term; for Gaussian white-noise disorder in this model, the $\Psi$-type contribution cancels while the $X$-type term remains finite. The formalism provides a consistent route for incorporating band geometry and crossed-disorder corrections into multiband transport, with applications to spin, pseudospin, orbital, and valley phenomena.

cond-mat.mes-hall↗

arXiv2026

Zitterbewegung velocity in semiclassical electron dynamics

Zitterbewegung plays a major role in electron dynamics in solids, yet is not captured in conventional semiclassical treatments. Here, starting from the quantum Liouville equation, I identify a new Zitterbewegung velocity, which involves the symmetric and antisymmetric components of the quantum geometric tensor oscillating out of phase. The Zitterbewegung velocity resolves the position-shift paradox, recovering the field-induced shift in an electron's position by integrating the semiclassical equations, and is directly related to the famous minimum conductivity of massless Dirac fermions.

cond-mat.other↗

arXiv2026

Ge as an orbitronic platform: giant in-plane orbital magneto-electric effect in a 2-dimensional hole gas

Increasing demand for computational power has initiated the hunt for energy efficient and stable memory devices. This is the overarching motivation behind the recent rise of \textit{orbitronics}, which looks to harness the orbital angular momentum of charge carriers in computing devices. Orbitronic devices require materials with efficient generation of orbital angular momentum (OAM). In 2D materials, OAM can be electrically generated via the orbital magneto-electric effect (OME). In this paper we report the calculation of the OME in 2 dimensional hole gases (2DHGs). We show that the OME in Ge holes is very large, for an applied electric field of the order $10^4$ V$/$m the OAM density is of the order $10^{12}$ $\hbar/$cm$^{2}$. Furthermore, we find the OME to be an order of magnitude larger than the Rashba-Edelstein effect in 2DHGs. The OME we calculated in 2DHGs generates OAM aligned in the plane and arises due to transitions between heavy and light hole states, which is unique to this system. Our results put Ge, as well as other p-type semiconductors, forward as strong candidates for building future orbitronic devices.

cond-mat.mes-hall↗

arXiv2025

Orbital Hall effect in spin-3/2 hole-doped semiconductors and its implications for orbitronics

State-of-the-art magnetic devices rely on faster, more efficient memory elements. A major recent advance is the discovery of orbital torques, which use the orbital angular momentum of Bloch electrons to switch the magnetisation of an adjacent ferromagnet, motivating the search for orbitronic materials with strong orbital responses, exemplified by the orbital Hall effect (OHE). Here we propose $p$-type semiconductors, with a focus on Ge, as orbitronic platforms. We demonstrate that bulk holes in five common semiconductors exhibit a large orbital Hall conductivity of order $10^3 (\hbar/e)\Omega^{-1}$cm$^{-1}$, exceeding the spin-Hall effect by 2-3 orders of magnitude. The calculation is performed within the framework of the modern theory of orbital magnetisation, while incorporating recently-discovered quantum corrections to the OHE. Moreover, we argue that bulk $p$-type Ge and Si serve as ideal testbeds for the orbital torque resulting from a charge current, since the spin- and orbital-Edelstein effects are forbidden by symmetry. Our results provide a blueprint for producing strong orbital torques in magnetic devices with $p$-type semiconductors, guiding experimental work in this direction.

cond-mat.mes-hall↗

arXiv2025

Room-Temperature Disorder-Driven Nonlinear Transport in Topological Materials

Recent experiments have reported nonlinear signals in topological materials up to room temperature. Here we show that this response stems from extrinsic spin-orbit contributions to \textit{both} impurity and phonon scattering. While skew scattering dominates at low temperatures, the side jump contribution $\propto \tau/\tau_\beta$, where $\tau$, $\tau_\beta$ are the momentum and skew scattering times respectively. Consequently side jump exhibits a weak temperature dependence and remains sizable at room temperature. Our results provide a roadmap for engineering nonlinear transport at ambient conditions.

cond-mat.mes-hall↗

arXiv2025

Quantum geometry and dipolar dynamics in the orbital magneto-electric effect

We show that the orbital magneto-electric effect (OME) -- the generation of a steady-state orbital angular momentum density -- is partly the result of a nonequilibrium dipole moment generated via Zitterbewegung and proportional to the quantum metric. For tilted massive Dirac fermions this dipole gives the only contribution to the OME in the insulating case, while the intrinsic and extrinsic OMEs occur for different electric field orientations, yielding an experimental detection method. Our results suggest quantum metric engineering as a route towards maximizing orbital torques.

cond-mat.mes-hall↗

arXiv2025

Anisotropic spin-blockade leakage current in a Ge hole double quantum dot

Group IV quantum dot hole spin systems, exhibiting strong spin-orbit coupling, provide platforms for various qubit architectures. The rapid advancement of solid-state technologies has significantly improved qubit quality, including the time scales characterizing electrical operation, relaxation, and dephasing. At this stage of development, understanding the relations between the underlying spin-orbit coupling and experimental parameters, such as quantum dot geometry and external electric and magnetic fields, has become a priority. Here we focus on a Ge hole double quantum dot in the Pauli spin blockade regime and present a complete analysis of the leakage current under an out-of-plane magnetic field. By considering a model of anisotropic in-plane confinement and $k^3$-Rashba spin-orbit coupling, we determine the behaviour of the leakage current as a function of detuning, magnetic field magnitude, interdot distance, and individual dot ellipticities. We identify regions in which the leakage current can be suppressed by quantum dot geometry designs. Most importantly, by rotating one of the quantum dots, we observe that the quantum dot shape induces a strongly anisotropic leakage current. These findings provide guidelines for probing the spin-orbit coupling, enhancing the signal-to-noise ratio, and improving the precision of Pauli spin blockade readout in hole qubit architectures.

cond-mat.mes-hall↗

arXiv2025

Effect of disorder and strain on the operation of planar Ge hole spin qubits

Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy disorder and gate-induced strain on the operation of planar Ge hole spin qubits. Electrical operation of hole quantum dot spin qubits is enabled by the strong Rashba spin-orbit coupling (SOC) originating from the intrinsic SOC in the Ge valence band as well as from the structural inversion asymmetry inherent in the underlying 2D hole gas. We use the atomistic valence force field (VFF) method to compute the strain due to random alloy disorder, and thermal expansion models in COMSOL Multiphysics to obtain the strain from a realistic gate-stack of planar hole quantum dot confinement. Recently, spin-orbit coupling terms $\propto k$ have been shown to be induced by strain inhomogeneity. Our hybrid approach to realistic device modeling suggests that strain inhomogeneity due to both random alloy disorder and gate-induced strain make a strong contribution to the linear-$k$ Dresselhaus spin-orbit coupling, which eventually dominates hole spin EDSR; and there exist specific in-plane orientations of the global magnetic field $\mathbf{B}$ and the microwave drive $\mathbf{\tilde{E}}_{\text{ac}}$ for maximum EDSR Rabi frequency of the hole spin qubit. The current model including strain inhomogeneity accurately predicts the EDSR Rabi frequency to be $\!\sim\!100$ MHz for typical electric and magnetic fields in experiments, which represents at least an order of magnitude improvement in accuracy over phenomenological models assuming uniform uniaxial strain. State-of-the-art atomistic tight binding calculations via nano-electronic modeling (NEMO3D) are in agreement with the $\mathbf{k}{\cdot}\mathbf{p}$ description.

cond-mat.mes-hall↗

arXiv2025

Giant orbital Hall effect due to the bulk states of 3D topological insulators

The highly efficient torques generated by 3D topological insulators make them a favourable platform for faster and more efficient magnetic memory devices. Recently, research into harnessing orbital angular momentum in orbital torques has received significant attention. Here we study the orbital Hall effect in topological insulators. We find that the bulk states give rise to a sizeable orbital Hall effect that is up to 3 orders of magnitude larger than the spin Hall effect in topological insulators. This is partially because the orbital angular momentum that each conduction electron carries is up to an order of magnitude larger than the $\hbar/2$ carried by its spin. Our results imply that the large torques measured in topological insulator/ferromagnet devices can be further enhanced through careful engineering of the heterostructure to optimise orbital-to-spin conversion.

cond-mat.mes-hall↗

arXiv2024

Room-temperature nonlinear transport and microwave rectification in antiferromagnetic MnBi$_2$Te$_4$ films

The discovery of the nonlinear Hall effect provides an avenue for studying the interplay among symmetry, topology, and phase transitions, with potential applications in signal doubling and high-frequency rectification. However, practical applications require devices fabricated on large area thin film as well as room-temperature operation. Here, we demonstrate robust room-temperature nonlinear transverse response and microwave rectification in MnBi$_2$Te$_4$ films grown by molecular beam epitaxy. We observe multiple sign-reversals in the nonlinear response by tuning the chemical potential. Through theoretical analysis, we identify skew scattering and side jump, arising from extrinsic spin-orbit scattering, as the main mechanisms underlying the observed nonlinear signals. Furthermore, we demonstrate radio frequency (RF) rectification in the range of 1-8 gigahertz at 300 K. These findings not only enhance our understanding of the relationship between nonlinear response and magnetism, but also expand the potential applications as energy harvesters and detectors in high-frequency scenarios.

cond-mat.mtrl-sci↗

arXiv2024

Transverse magnetic focusing in two-dimensional hole gases

Two-dimensional hole gases (2DHGs) have strong intrinsic spin-orbit coupling and could be used to build spin filters by utilising transverse magnetic focusing (TMF). However, with an increase in the spin degree of freedom, holes demonstrate significantly different behaviour to electrons in TMF experiments, making it difficult to interpret the results of these experiments. In this paper, we numerically model TMF in a 2DHG within a GaAs/Al$_{\mathrm{x}}$Ga$_{\mathrm{1-x}}$As heterostructure. Our band structure calculations show that the heavy $(\langle J_{z} \rangle = \pm\frac{3}{2})$ and light $(\langle J_{z} \rangle = \pm\frac{1}{2})$ hole states in the valence band mix at finite $k$, and the heavy hole subbands which are spin-split due to the Rashba effect are not spin-polarised. This lack of spin polarisation casts doubt on the viability of spin filtering using TMF in 2DHGs within conventional GaAs/Al$_{\mathrm{x}}$Ga$_{\mathrm{1-x}}$As heterostructures. We then calculate transport properties of the 2DHG with spin projection and offer a new perspective on interpreting and designing TMF experiments in 2DHGs.

cond-mat.mes-hall↗

arXiv2024

Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots

In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor and spin-relaxation induced leakage current within the Pauli spin-blockade regime as a function of magnetic-field orientation at three different hole occupation numbers. We find the g-tensor and spin-leakage current to be highly anisotropic due to light-hole/heavy-hole mixing and spin-orbit mixing, but discover the anisotropies to be relatively insensitive to the dot hole number. Furthermore, we extract the dominant inter-dot spin-orbit coupling mechanism as surface Dresselhaus, with an in-plane orientation parallel to transport and magnitude $\boldsymbol{t_{SO}}$ $\approx$ 300 neV. Finally, we observe a strong correlation between the g-factor difference ($\delta$$\boldsymbol{g}$) between each dot and the spin-leakage current anisotropy, as a result of $\delta$$\boldsymbol{g}$ providing an additional spin-relaxation pathway, and should be considered. ]Our findings indicate that hole-spin devices are not as sensitive to precise operating conditions as anticipated. This has important implications optimizing spin control and readout based on magnetic-field direction, together with tuning large arrays of QDs as spin-qubits.

cond-mat.mes-hall↗

arXiv2024

Longitudinal DC Conductivity in Dirac Nodal Line Semimetals: Intrinsic and Extrinsic Contributions

Nodal line semimetals, a class of topological quantum materials, exhibit a variety of novel phenomena due to their properties, such as bands touching on a one-dimensional line or a ring in the Brillouin zone and drumhead-like surface states. In addition, these semimetals are protected by the combined space-inversion and time-reversal ($\mathcal{PT}$) symmetry. In this study, we investigate the longitudinal DC conductivity of the Dirac nodal line semimetals for the broken $\mathcal{PT}$-symmetric system by the mass term. Here, using the quantum kinetic technique, we find the intrinsic (field-driven) and extrinsic (scattering-driven) contributions to the total DC conductivity due to interband effects. Interestingly, the resulting intrinsic conductivity is the Fermi sea contribution, while the extrinsic stems from the Fermi surface contribution. We show that at low chemical potential, the extrinsic part contributes more and dominates over the traditional Drude intraband term, while at the high chemical potential, the intrinsic conductivity contributes. Furthermore, the total DC response due to interband effects saturates at high chemical potential and its strength decreases with increasing mass value. Our findings suggest that the extrinsic contributions are rich enough to understand the overall feature of the response for the three-dimensional system.

cond-mat.str-el↗

arXiv2024

Dephasing of planar Ge hole spin qubits due to 1/$\textit{f}$ charge noise

Hole spin qubits in Ge, investigated for all-electrical spin manipulation because of its large spin-orbit coupling, are exposed to charge noise leading to decoherence. Here we construct a model of $1/f$ noise from individual fluctuators and determine the dephasing time $T_2^*$ as a function of qubit properties. $T_2^*$ decreases with increasing magnetic field and is an order of magnitude longer for out-of-plane than for in-plane fields for the same Zeeman energy. $T_2^*$ shows little variation as a function of the top gate field and is a complex function of the dot radius. Our results should help experiments to enhance coherence in hole qubit architectures.

cond-mat.mes-hall↗

arXiv2024

Quantum correction to the orbital Hall effect

Evaluations of the orbital Hall effect (OHE) have only retained inter-band matrix elements of the position operator. Here we evaluate the OHE including all matrix elements of the position operator, including the technically challenging intra-band elements. We recover previous results and find quantum corrections due to the non-commutativity of the position and velocity operators and inter-band matrix elements of the orbital angular momentum. The quantum corrections dominate the OHE responses of the topological antiferromagnet CuMnAs and of massive Dirac fermions.

cond-mat.mes-hall↗

arXiv2024

2024 roadmap on 2D topological insulators

2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives.

cond-mat.mes-hall↗

arXiv2024

Spin-Hall effect in topological materials: Evaluating the proper spin current in systems with arbitrary degeneracies

The spin-Hall effect underpins some of the most active topics in modern physics, including spin torques and the inverse spin-Hall effect, yet it lacks a proper theoretical description. This makes it difficult to differentiate the SHE from other mechanisms, as well as differentiate band structure and disorder contributions. Here, by exploiting recent analytical breakthroughs in the understanding of the intrinsic spin-Hall effect, we devise a density functional theory method for evaluating the conserved (proper) spin current in a generic system. Spin non-conservation makes the conventional spin current physically meaningless, while the conserved spin current has been challenging to evaluate since it involves the position operator between Bloch bands. The novel method we introduce here can handle band structures with arbitrary degeneracies and incorporates all matrix elements of the position operator, including the notoriously challenging diagonal elements, which are associated with Fermi surface, group velocity, and dipolar effects but often diverge if not treated correctly. We apply this method to the most important classes of spin-Hall materials: topological insulators, 2D quantum spin-Hall insulators, non-collinear antiferromagnets, and strongly spin-orbit coupled metals. We demonstrate that the torque dipole systematically suppresses contributions to the conventional spin current such that, the proper spin current is generally smaller in magnitude and often has a different sign. Remarkably, its energy-dependence is relatively flat and featureless, and its magnitude is comparable in all classes of materials studied. These findings will guide the experiment in characterizing charge-to-spin interconversion in spintronic and orbitronic devices. We also discuss briefly a potential generalisation of the method to calculate extrinsic spin currents generated by disorder scattering.

cond-mat.mes-hall↗

arXiv2024

Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes

As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. Firstly, at least 10^6 times faster response comparing to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Secondly, ultra-low current density is required for resistance modulation (~ 5 A/cm$^2$). Thirdly, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behaviour in the Mn$_3$Si$_2$Te$_6$ nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultra-fast process (~nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn$_3$Si$_2$Te$_6$ nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation and spin torque.

cond-mat.mes-hall↗