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arXiv · 2408.10302

Dephasing of planar Ge hole spin qubits due to 1/$\textit{f}$ charge noise

Zhanning Wang·Sina Gholizadeh·Xuedong Hu·S. Das Sarma·Dimitrie Culcer
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Abstract

Hole spin qubits in Ge, investigated for all-electrical spin manipulation because of its large spin-orbit coupling, are exposed to charge noise leading to decoherence. Here we construct a model of $1/f$ noise from individual fluctuators and determine the dephasing time $T_2^*$ as a function of qubit properties. $T_2^*$ decreases with increasing magnetic field and is an order of magnitude longer for out-of-plane than for in-plane fields for the same Zeeman energy. $T_2^*$ shows little variation as a function of the top gate field and is a complex function of the dot radius. Our results should help experiments to enhance coherence in hole qubit architectures.

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Zhanning Wang, Sina Gholizadeh, Xuedong Hu, S. Das Sarma, Dimitrie Culcer. 2024-08-19. Dephasing of planar Ge hole spin qubits due to 1/$\textit{f}$ charge noise. https://doi.org/10.1103/physrevb.111.155403

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