arXiv subjects

Deep Jariwala

Publications and source records attributed to Deep Jariwala.

At least 19 recordsLinked to original sources

arXiv2026

STEMPix: A Phase-Transition-Material-Based Pixel Sensor for Resolving Edge-Movement Direction

This paper proposes a spatio-temporal edge-movement direction pixel (STEMPix) for generating compact direction-aware edge movement information inside a CMOS-compatible image sensor array. The proposed design targets specialized sensing applications where local boundary movement is more important than full-frame intensity reconstruction. Instead of transferring full multi-bit frames for external processing, STEMPix generates a 3-bit local edge direction code (LEDC) by combining pixel-level temporal change information with neighboring-pixel spatial edge information. We design the architecture using a two-tier organization, where the photodiode layer is separated from the computation layer to preserve light-collection area while accommodating the additional in-array processing circuitry. The proposed circuit is evaluated through HSPICE transient simulations. The estimated implementation achieves a horizontal pitch of 1.73 {\mu}m, a vertical pitch of 2.36 {\mu}m, and a geometric fill factor of 95.47%. The average active switching energy is 0.465 fJ per LEDC operation across representative edge-movement cases. The proposed STEMPix operation also supports global-shutter capture and dynamic thresholding. These results indicate that STEMPix can provide a compact and scalable front-end representation for edge-movement-aware sensing systems.

cs.ET↗

arXiv2026

Neural dynamical systems on ferroelectric compute-in-memory for real-time forecasting

Neural dynamical systems are expressive temporal predictors that capture continuous-time dynamics through fine-grained state updates. However, this sequential structure maps poorly onto digital hardware optimized for dense matrix operations, a mismatch that analog neuromorphic computing, with its native continuous-time dynamics, can resolve. We introduce FerroNDS, a neuromorphic system built from two analog primitives: an integrator for temporal accumulation and an oscillator for frequency-selective filtering. We map this system onto compute-in-memory hardware based on multi-bit ferrodiodes. A 128-neuron instance of FerroNDS computes short-time Fourier transform and forecasts a 500-ms horizon for periodic, quasi-periodic, and chaotic signals. The system achieves sub-watt real-time operation with per-neuron per-inference energy of 1.64 $\mu$J (200 Hz) and 0.29 $\mu$J (10 kHz), 25-40$\times$ area reduction over SRAM-based digital systems, and per-layer latency of 3.18 ms (200 Hz) and 63.87 $\mu$s (10 kHz). To our knowledge, this is the first end-to-end integration of a ferrodiode into a neuromorphic computational framework, establishing ferroelectric compute-in-memory as a practical substrate for analog neural dynamical systems.

cs.ET↗

arXiv2026

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN

Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we show that compositional grading within a continuous wurtzite AlN-AlScN lattice mitigates these limitations by distributing structural and polarization discontinuities across the film thickness, reducing defect formation and local field concentration. In a 20 nm graded heterostructure, monotonic Sc incorporation and AlN-rich boundaries produce reversible ferroelectric switching, an as-grown metal-polar state, a 21% higher breakdown field, 10% enhanced remanent polarization, and 40x higher resistivity relative to homogeneous AlScN. Time-domain PUND measurements reveal strongly suppressed post-switching leakage, consistent with reduced defect-assisted and polarization-coupled conduction. This improved dielectric robustness enables ferroelectric functionality in 5 nm graded stacks containing only a 2 nm $\mathrm{Al}_{0.64}\mathrm{Sc}_{0.36}\mathrm{N}$ region, with measurable switching near 1 V. These results establish compositional grading as a defect- and field-management strategy for scalable ultrathin wurtzite ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2026

Ultraviolet Exciton-Polaritons in Silver Phenylthiolate

Ultraviolet (UV) exciton-polaritons (EPs) enable nonlinear optics, polaritonic lasing, and polariton-mediated photochemistry in the short-wavelength regime, yet progress has been limited due to the scarcity of materials that combine large oscillator strength with stable and narrow UV excitons. Here, we demonstrate UV EPs in silver phenylthiolate (Thiorene, AgSPh), a van der Waals (vdW) layered metal-organic chalcogenolate (MOC) that forms a natural multi-quantum-well (MQW) architecture showing strong excitonic features. Imaging spectroscopic ellipsometry reveals a pronounced in-plane excitonic resonance at 3.46 eV with a narrow linewidth of ~ 60 meV, strong UV birefringence ({\Delta}n ~ 0.3), and a high refractive index (n ~ 2.1). Temperature-dependent photoluminescence (PL) shows excitonic emission with a large Stokes shift and substantial exciton-phonon coupling. In both open (self-cavity) and closed cavities, thickness-dependent and angle-resolved reflectance spectra exhibit clear anticrossing, yielding large Rabi splittings of approximately 500 meV. These values are among the largest reported in the UV, positioning thiorene as a promising platform for UV polariton lasers and polariton-enabled photochemistry.

physics.optics↗

arXiv2026

Neuromorphic Computing for Low-Power Artificial Intelligence

Classical computing is beginning to encounter fundamental limits of energy efficiency. This presents a challenge that can no longer be solved by strategies such as increasing circuit density or refining standard semiconductor processes. The growing computational and memory demands of artificial intelligence (AI) require disruptive innovation in how information is represented, stored, communicated, and processed. By leveraging novel device modalities and compute-in-memory (CIM), in addition to analog dynamics and sparse communication inspired by the brain, neuromorphic computing offers a promising path toward improvements in the energy efficiency and scalability of current AI systems. But realizing this potential is not a matter of replacing one chip with another; rather, it requires a co-design effort, spanning new materials and non-volatile device structures, novel mixed-signal circuits and architectures, and learning algorithms tailored to the physics of these substrates. This article surveys the key limitations of classical complementary metal-oxide-semiconductor (CMOS) technology and outlines how such cross-layer neuromorphic approaches may overcome them.

cs.AR↗

arXiv2026

Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning

The manipulation of optical properties, including reflection, refraction, polarization, phase, and frequency, has long been central to advancing photonic and optoelectronic technologies. However, existing electro-optical approaches rely on volatile mechanisms that require continuous power consumption. Here, we demonstrate strong, nonvolatile modulation of optical dispersion in monolayer tungsten disulfide (ML WS2) using patterned ferroelectric domains in aluminum scandium nitride (AlScN). By locally poling ferroelectric domains into opposite states, we achieve substantial manipulation of the complex refractive index (Delta n > 0.7, Delta k > 0.4) and excitonic energy shifts (~50 meV) in ML WS2, comparable to previous gate-tuning approaches while eliminating continuous power consumption. We introduce an asymmetric screening model that reveals how ferroelectric polarization induces carrier-density-dependent Coulomb screening, leading to distinct excitonic behaviors between electron- and hole-doped regions. Furthermore, we demonstrate a gate-free lateral p-n homojunction with a rectification ratio of 6e10^3, formed through spatial carrier redistribution. These findings establish ferroelectric/2D heterostructures as a powerful platform for nonvolatile optical dispersion engineering, enabling energy-efficient, reconfigurable photonic and optoelectronic devices.

physics.optics↗

arXiv2026

Photoinduced metastable cation disorder in metal halide double perovskites

Lead-free perovskites have emerged as environmentally benign alternatives to lead-halide counterparts for optoelectronics. Among them, the double perovskite Cs2AgInCl6 family exhibits remarkable white-light emission with proper composition engineering, enabled by strong electron-phonon coupling and the formation of self-trapped excitons (STEs). Despite these advantages, the fundamental photo- and structural dynamics governing their excited-state behavior remain poorly understood. Here, we report a long-lived metastable phase in the Cs2AgInCl6 double perovskite family and unravel this process and the concomitant electronic and structural evolution using a suite of tools including transient optical spectroscopy, time-resolved X-ray diffraction (TR-XRD) and X-ray absorption (TR-XAS). We show that the photoinduced, transient metastable phase is associated with B-site (Ag-In) disorder, which induces a dramatically reduced optical bandgap. Supported by TR-XRD and first-principles calculations, the Ag-In disorder drives the formation of Ag-rich and In-rich domains with millisecond lifetimes, with lifetimes increasing at lower temperatures. TR-XAS further reveals that photogenerated STEs oxidize Ag+ to Ag2+, facilitating this highly temporally asymmetric order-disorder transition. Our findings demonstrate a new mechanism, mediated by hole-localized STE formation, that enables prolongation of transient light-induced states to the multi-millisecond regime in double perovskites, opening possibilities to harvesting the functional properties of metastable phases of these materials.

cond-mat.mtrl-sci↗

arXiv2026

Understanding Optical Anisotropy in Multilayer {\gamma}-InSe and {\epsilon}-GaSe

Low-dimensional media have exhibited optical anisotropy that is unachievable in traditional 3D media due to the asymmetry of their strong, in-plane covalent bonds and weak out-of-plane van der Waals interactions. As a result, 2D media are promising building blocks for ultrathin devices such as polarimeters, polarized light sources, and active polarizers. III-VI semiconductors possess a rare property in the class of multilayered semiconductors, which is that their fundamental excitons are oriented out-of-plane. This allows them to exhibit phenomena such as transparency in the visible range while also being emissive in the visible and near-infrared ranges. Here, we report the first experimental values for the anisotropic refractive indices of {\gamma}-InSe and {\epsilon}-GaSe, and we observe the effects of the out-of-plane excitons on the c-axis refractive index. It is found that both materials exhibit moderate optical anisotropy for multilayered semiconductors. The complex, anisotropic refractive index of {\gamma}-InSe and {\epsilon}-GaSe enables the accurate simulation of these media, allowing for the design of high-performance, ultra-compact optoelectronic devices.

physics.optics↗

arXiv2025

Self-Hybridized Exciton-Polariton Photodetectors From Layered Metal-Organic Chalcogenolates

Exciton-polaritons (EPs) arising from strong light-matter coupling offer new pathways for controlling optoelectronic properties. While typically requiring closed optical cavities for strong coupling, we demonstrate that 2D metal-organic chalcogenolates (MOCs), mithrene (AgSePh), with a high refractive index (~2.5) and strong excitons enable self-hybridized polaritons photodetectors (PDs) without top mirrors, simplifying device architecture. Through thickness-tuned multimode polariton engineering, we achieve photodetection of sub-bandgap photons via lower polariton states, validated through reflectance, photoluminescence (PL), and photocurrent spectroscopy with quantitative theoretical agreement. Trap-assisted two-photon absorption enables sustained strong coupling even under sub-bandgap excitation. The polariton dispersion yields ultrafast group velocities (~65 {\mu}m/ps), extending exciton diffusion lengths from hundreds of nanometers to several micrometers. Strong-coupling devices demonstrate a 2.38-fold enhancement in photo-to-dark current ratio compared to weak-coupling counterparts, establishing a practical route to polariton-enhanced photodetection and light harvesting.

physics.optics↗

arXiv2025

Electrically Tunable Excitonic-Hyperbolicity in Chirality-Pure Carbon Nanotubes

Metamaterials exhibiting hyperbolic dispersion enable unprecedented control over light-matter interactions, from sub-diffraction imaging to enhanced spontaneous emission. However, conventional plasmonic hyperbolic metamaterials suffer from limited tunability and lack intrinsic emission capabilities, constraining their utility for active photonic devices. Here, we demonstrate the first room-temperature, electrically tunable, excitonic hyperbolic metamaterial using aligned films of chirality-pure semiconducting carbon nanotubes. Unlike plasmonic systems, these excitonic metamaterials of aligned nanotubes combine strong optical anisotropy with dynamic electrostatic tunability. Spectroscopic ellipsometry reveals that the hyperbolic dispersion window can be electrically shifted by 53 meV, enabling real-time switching between hyperbolic and elliptical regimes. Theory predicts that this tunability translates to the propagation angle being modulated by 34°, driven by a momentum enhancement 3.11 times that of free space, limited primarily by material losses that can be mitigated through improved alignment. In addition, simulations of the system exhibit a high Purcell factor of 1550 and a modulation of 37 % without an optical cavity for a dipole placed 5 nm above the aligned nanotubes. These findings establish excitonic carbon nanotubes as a versatile platform for dynamically reconfigurable photonic metamaterials, opening pathways for adaptive optical devices, electrically-controlled spontaneous emission, and tunable hyper-lenses operating at room temperature.

physics.optics↗

arXiv2025

Reconfigurable, non-volatile control of optical anisotropy in ReS2 via ferroelectric gating

Electrically tunable linear dichroism (LD) with non-volatile properties represents a critical yet elusive feature for next-generation integrated photonic elements in practical device architectures. Here, we demonstrate record-breaking, non-volatile control of optical anisotropy in two-dimensional ReS2 via ferroelectric gating with aluminum scandium nitride (AlScN). Our ferroelectric field-effect transistors achieve near-unity (~95%) LD tunability of differential reflectance at room temperature--the highest reported for any electrically controlled 2D optical system. Crucially, the programmed optical states exhibit exceptional retention exceeding 12,000 seconds without applied bias, enabling true non-volatile optical memory. Through combined experimental characterization and ab initio calculations, we reveal that ferroelectric polarization switching induces substantial asymmetric charge transfer to ReS2, selectively populating conduction band states and triggering structural distortions that dramatically enhance optical anisotropy in the "up" polarization state while leaving the "down" state unperturbed. This ferroelectric-semiconductor coupling provides a universal platform for voltage-programmable, energy-efficient photonic devices with dynamic polarization control, addressing critical needs in integrated photonics as well as programmable far-field optics and telecommunications infrastructure.

physics.optics↗

arXiv2025

Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm$^2$

Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques. Here, we demonstrate the first successful areal scaling of Aluminum Scandium Nitride (AlScN) ferroelectric diode (FeDiode) memory down to 40 nm device diameters while maintaining ON/OFF > 60. Using a 20 nm thick Al0.64Sc0.36N ferroelectric layer, we evaluate both metal-insulator-ferroelectric-metal (MIFM) and metal-ferroelectric-metal (MFM) architectures for scaled resistive memory devices. Our scaled devices exhibit an enhanced breakdown-to-coercive field ratio exceeding 2.6 due to increased breakdown field. The MIFM devices demonstrate stable 3-bit non-volatile multistate behavior with clearly distinguishable resistance states and retention exceeding 4*10^4 seconds at 85 C. By achieving more than a million-fold areal scaling with enhanced performance metrics, this work establishes AlScN-based FeDiode memory as a highly promising platform for non-volatile storage with potential for direct integration into CMOS technology.

cond-mat.mes-hall↗

arXiv2025

Hydrazine-Free Precursor for Solution-Processed All-Inorganic Se and Se1-xTex Photovoltaics

Selenium (Se) has reemerged as a promising absorber material for indoor and tandem photovoltaics (PVs), and its alloys with Te (Se1-xTex) offer a widely tunable bandgap. Solution processing of this materials system offers a route to low-cost fabrication. However, solution processing of Se has, thus far, only used hydrazine, which is an extremely hazardous solvent. In this work, we prepare and isolate propylammonium poly-Se and poly-Se-Te precursors from a safer thiol-amine solvent system. We formulate molecular inks by dissolving the precursor n,n-dimethylformamide (DMF) with a monoethanolamine (EA) additive and process high-quality Se and Se1-xTex films with bandgaps ranging from 1.20 eV to 1.86 eV. We fabricate PVs from these films using TiO2 and MoO3 charge transport layers (CTLs) to achieve power conversion efficiencies as high as 2.73% for Se and 2.33% for Se0.7Te0.3 under solar simulation. Se devices show excellent stability with no degradation after 1 month in air, enabled by the excellent stability of Se and the use of inorganic CTLs. This work represents an important step towards low-cost solution-phase processing of Se and Se1-xTex alloys for PVs and photodetectors with low toxicity and high bandgap tunability.

cond-mat.mtrl-sci↗

arXiv2025

Experimental demonstration of corrugated nanolaminate films as reflective light sails

Achieving laser-driven, reflective, relativistic light sails would represent a tremendous breakthrough for humankind, allowing us to advance our understanding of the solar system and deep space far beyond what we know from space probes, telescopes, and objects passing near Earth. Numerous sail film designs have been proposed, but none have been demonstrated that satisfy all of the stringent optical, mechanical, and mass budget constraints. Here we overcome this challenge by experimentally demonstrating a novel class of optically-optimized nanolaminate sails with strong and flexible hexagonally-corrugated microstructures. Our prototypes, fabricated from alumina and molybdenum disulfide using scalable semiconductor processing techniques, feature ultra-low areal densities of <1 g/m^2 and achieve experimentally-measured reflectivities of >50% and absorptivities of <4% within the Doppler-shifted laser wavelength range corresponding to accelerating to a fifth the speed of light. Moreover, we analyze reflectivity, strength, and mass constraints to show that our sails have the potential to achieve greater maximum velocities than other sail designs in the literature. Broadly, our films mark a significant leap forward toward plausible relativistic interstellar propulsion for intragalactic exploration

physics.optics↗

arXiv2025

Natural Hyperbolicity of Hexagonal Boron Nitride in the Deep Ultraviolet

Hyperbolic media enable unique optical phenomena including hyperlensing, negative refraction, enhanced photonic density of states (PDOS), and highly confined polaritons. While most hyperbolic media are artificially engineered metamaterials, certain natural materials with extreme anisotropy can exhibit hyperbolic dispersion. Here, we report the first observation of natural hyperbolic dispersion in hexagonal boron nitride (hBN) in the deep-ultraviolet (DUV) regime, induced by strong, anisotropic exciton resonances. Using imaging spectroscopic ellipsometry (ISE), we characterize the complex dielectric function along in-plane and out-of-plane directions down to 190 nm (6.53 eV), revealing a type-II hyperbolic window in the DUV regime. This hyperbolicity supports hyperbolic exciton polaritons (HEP) with high directionality and slow group velocity. Our findings establish hBN as a promising platform for nanophotonic applications in the technologically significant DUV spectral range.

physics.optics↗

arXiv2025

Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays

We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizing a fully CMOS back-end-of-line (BEOL) compatible process, we fabricated 2-kilobyte (128 $\times$ 128) arrays with device diameters down to 5 $μ$m, achieving memory densities up to 2500 bits/mm$^2$. Large-scale electrical characterization across 1000 randomly selected devices reveals a yield rate of 95.2%, a tight switching voltage distribution with a coefficient of variation (CV) of 0.003, and consistent on/off ratios of around 10 with a CV of 0.27. We demonstrate selector-free read and program operations of the array, enabled by the high nonlinearity, rectification, and uniform switching behavior of the FE diodes. Furthermore, we verified consistent ferroelectric switching during array operation at temperatures up to 600 $^\circ$C. Our results highlight the potential of AlScN FE diode arrays for energy-efficient, high-density memory applications and lay the groundwork for future integration in compute-near-memory, high-temperature memory, and analog compute-in-memory systems.

cond-mat.mes-hall↗

arXiv2025

Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation

This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37~nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600~$^\circ$C, exhibited a linear decrease in coercive fields from 6.2~MV/cm at room temperature to 4.2~MV/cm at 600~$^\circ$C, while remanent polarization remained stable with temperature. Direct current I-V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments.

cond-mat.mtrl-sci↗

arXiv2025

Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN

Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values exceeding 100 uC/cm2. However, their high coercive fields (>3 MV/cm) have limited cycling endurance to ~107 cycles in previous reports. Here, we demonstrate unprecedented control of polarization switching in AlScN, achieving write cycling endurance exceeding 1010 cycles a thousand fold improvement over previous wurtzite ferroelectric benchmarks. Through precise voltage modulation in 45 nm thick Al0.64Sc0.36N capacitors, we show that while complete polarization reversal (2Pr ~ 200 uC/cm2) sustains ~108 cycles, partial switching extends endurance beyond 1010 cycles while maintaining a substantial polarization (>30 uC/cm2 for 2Pr). This exceptional endurance, combined with breakdown fields approaching 10 MV/cm in optimized 10 um diameter devices, represents the highest reported values for any wurtzite ferroelectric. Our findings establish a new paradigm for reliability in nitride ferroelectrics, demonstrating that controlled partial polarization and size scaling enables both high endurance and energy efficient operation.

cond-mat.mtrl-sci↗