arXiv subjects

David A. Muller

Publications and source records attributed to David A. Muller.

At least 19 recordsLinked to original sources

arXiv2026

High-Temperature ferromagnetism from site-selective filling in (Fe,Ni)$_{6-\delta}$GeTe$_2$

The discovery of high-temperature ferromagnetism in the metallic van der Waals (vdW) system Fe$_N$GeTe$_2$ has brought two-dimensional (2D) magnets into technologically relevant temperature scales. Specifically at N = 5, dilution of magnetic moments by nickel substitution counterintuitively achieves a record high Curie temperature of 478~K. Unraveling the origin of this nickel-substitution-induced enhancement is complicated by the compound's structural complexity, coexistent itinerant and local magnetic contributions, and mesoscopic compositional domains. Through coordinated structural and electronic characterization, we identify that the high-T$_C$ magnetic phase arises from a strain-stabilized Fe$_6$GeTe$_2$ nano-precipitate. Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy (ARPES), we uncover a site-specific electronic landscape in which interior iron atoms primarily host localized moments while the outer iron atoms neighboring the tellurium layers produce spin-polarized itinerant carriers that cross the vdW gap. The large energy cost associated with homogeneous nickel substitution is found to favor the spontaneous precipitation of the crystallographically and electronically ``clean'' high-T$_C$ phase. Finally, we compare metal-rich vdW magnets with binary magnetic alloys, and discuss the unifying roles of nano-precipitates in stabilizing otherwise unattainable bulk phases. Our work provides mechanistic insights into the record-high T$_C$ ferromagnetism in (Fe,Ni)$_{5+\delta}$GeTe$_2$, establishing a rigorous foundation for the atomic engineering of vdW magnetic metals informed by direct electronic signatures.

cond-mat.mtrl-sci↗

arXiv2026

Scalable Bayesian Optimization of Composite Functions for Image-Based Inverse Problems in Materials Characterization

Estimating physical parameters from scientific images is a common inverse problem in materials characterization that often relies on expensive physics-based simulations. In electron microscopy, specimen thickness and crystal mistilt are critical parameters that govern how electrons scatter through the sample, and therefore the accuracy of any atomic-scale structure recovered from it. They are commonly inferred by matching experimental position-averaged convergent-beam electron diffraction (PACBED) patterns to simulated ones, but grid searches scale poorly and neural-network methods require extensive pretraining that may not transfer to new conditions. Here, we propose scalable Bayesian optimization of composite functions (SBOCF), a simulation-efficient method that exploits the known composite structure of the image-matching objective and the intermediate information contained in simulated images. By representing PACBED images with patch-level summaries and two correction terms, SBOCF preserves the original pixel-wise objective while reducing the number of modeled outputs from 24,649 to 11. Under a budget of 50 simulator evaluations, SBOCF outperformed standard Bayesian optimization with expected improvement on synthetic SrTiO3 benchmarks with thick and thin specimens, reducing the median final SSE by up to 290x in the thick-sample case. On experimental data, SBOCF produced parameter estimates consistent with previously reported values without task-specific pretraining. For a simulated mistilted specimen, using the SBOCF estimates in a downstream ptychographic reconstruction recovered sharp atoms that were otherwise blurred. These results establish SBOCF as a promising approach for inverse problems involving expensive simulators and high-dimensional structured outputs.

cs.LG↗

arXiv2026

Fabrication-free assessment of microwave losses in germanium-based dielectrics and superconductors

We present a flip-chip-based sensing scheme to measure effective microwave losses associated with target materials for quantum technologies, without requiring any device fabrication on the material under test. Using this approach, we quantify the microwave losses of a strain-engineered Ge/SiGe quantum well heterostructure and investigate losses arising from its Ge substrate and intermediate layers. The quality factors of the fabricated microwave resonators agree with the losses of dielectric materials independently extracted from flip-chip sensing measurements. We further study the superconductor platinum silicon germanide (PtSiGe) prepared by thermal reaction with a deposited Pt film, finding high microwave losses that limit the suitability of the films studied here as the sole superconductor for high-quality resonator applications. By coating Pt with Nb prior to the reaction, we observe a substantial reduction in microwave loss and a nearly three-fold enhancement of the transport critical temperature. The temperature dependence of the microwave loss is consistent with gap inhomogeneity in both superconducting films. These results identify constraints on material choices, provide design guidance for microwave circuits on planar Ge heterostructures, and demonstrate a fast-turnaround testing method for new materials for superconducting quantum circuits.

quant-ph↗

arXiv2026

Three-dimensional imaging of oxygen dopant distribution in Sr$_2$CuO$_{3+\delta}$ by electron ptychography

Oxygen dopants play a critical role in tuning the properties of cuprate superconductors, yet it is challenging to visualize them at the atomic scale. Here, we use multislice electron ptychography to directly image oxygen dopants in a Sr2CuO3+delta film. We observe oxygen dopants at interstitial sites between the Cu-O chains, with a strong preference for clustering in tensile-strained regions, which are often associated with dislocations and interfacial steps. These findings indicate that the oxygen dopant distribution in cuprates is not random but rather sensitive to strain field, suggesting strain as a doping tuning parameter.

cond-mat.mtrl-sci↗

arXiv2026

Persistent structural distortions and absent superconductivity in trilayer nickelate thin films

A new family of high-temperature superconductors was recently discovered in the $n=2,3$ Ruddlesden-Popper nickelates, where superconductivity emerges concomitant with suppression of parent density waves and structural octahedral rotations under hydrostatic pressure. Intriguingly, compressive strain mimics the structural effects of pressure in the $n=2$ phase, yielding ambient-pressure superconductivity. However, analogous strain-stabilized superconductivity has not been realized in the $n=3$. Here, we use atomically-precise synthesis, transport, picoscale electron microscopy, and synchrotron X-ray diffraction to probe $n=3$ La$_4$Ni$_3$O$_{10}$ thin films. Although compressive strain suppresses density wave order, we do not observe superconductivity even under the largest strain state. Importantly, we identify a structural distortion unique to strained $n=3$ thin films that may inhibit superconductivity: persistent, layer-inequivalent octahedral rotations around the $c$-axis. Our results highlight key differences between the $n=3$ and $n=2$ systems, suggesting that ambient-pressure superconductivity in the $n=3$ may require new methods beyond epitaxial strain engineering.

cond-mat.mtrl-sci↗

arXiv2026

Breaking symmetry to create a parallel-plate varactor dielectric with unparalleled microwave performance

Voltage-tunable capacitors (varactors) are key to microwave circuits. Tunable dielectric varactors outperform competing technologies in almost every relevant metric but usually suffer from high dielectric loss. In contrast, Ruddlesden-Popper (RPs) dielectric thin films have remarkably low microwave loss. Unfortunately, their crystallographic symmetry has until recently dictated an in-plane device structure, precluding the favorable out-of-plane parallel-plate varactor design for minimized size and maximized electric field in the tunable dielectric. Guided by theory, we report RPs akin to the widely studied tunable microwave dielectric BaxSr1-xTiO3. Assembling these same atoms into the first RP phase with broken out-of-plane symmetry, we achieve a low-loss, out-of-plane tunable dielectric thin film. The highest performing film, (ATiO3)nAO film with A = Ba0.45Sr0.55 and n = 8, unlocks a tenfold improvement in the figure of merit for out-of-plane tunable dielectrics at 10 GHz, paving the way for a new generation of tunable monolithic microwave integrated circuits.

cond-mat.mtrl-sci↗

arXiv2026

Crystallography of periodic nanotextures in a strained Mott insulator

Here we investigate stripes of alternating structural phases spontaneously forming in epitaxially strained $Ca_2RuO_4$ thin films below the metal-insulator transition. Using large-volume X-ray reciprocal-space mapping, we show that satellite-pattern intensities across 24 symmetry-inequivalent Bragg reflections collapse onto a single parameter-free curve. The collapse identifies a coherent martensitic laminate of few-nm-wide domains separated by ${012}$ interfaces, with displacements along $\left\langle01\bar{2}\right\rangle$. Satellite-extinction analysis demonstrates that both coexisting phases retain the bulk orthorhombic space group despite the pseudocubic $LaAlO_3$ substrate, biaxial epitaxial strain, and intrinsic strain at the interfaces. Classical invariant-plane-strain crystallography thus governs the nanoscale domain geometry of a Mott insulator with intertwined magnetic, electronic, and lattice order.

cond-mat.mtrl-sci↗

arXiv2026

Defect-engineered scaling of lead-free ferroelectrics with ultralow-voltage switching

Scaling ferroelectrics to nanometer thicknesses remains a central challenge for low-power, nonvolatile electronics, as leakage currents increasingly dominate with reduced dimensions. Alkali-based, lead-free ferroelectrics offer an environmentally sustainable alternative to lead-based systems, yet their scaling is severely limited by leakage arising from volatile alkali constituents. Here, we show that this intrinsic limitation can be transformed into an advantageous degree of freedom through defect engineering. By precisely modulating alkali deficiency during thin-film synthesis, we engineer clustered defect complexes that function as deep trap states, strongly suppressing leakage and enabling robust ferroelectric operation in ultrathin films down to the sub-10 nm regime at voltages below 100 mV. Our results establish defect-enabled scaling as a viable pathway for advancing environmentally benign ferroelectrics toward ultra-low-power, non-volatile electronic technologies.

cond-mat.mtrl-sci↗

arXiv2026

A superconducting half-dome in bilayer nickelates

Understanding how superconductivity emerges and collapses in correlated electron systems remains a central challenge in condensed matter physics. As a recently discovered member of the high temperature superconductor family, bilayer nickelates provide a new opportunity for examining this problem. Their pronounced sensitivity to oxygen stoichiometry, while posing challenges for stabilizing superconductivity, simultaneously offers an effective control parameter for tuning electronic phases. Here we report a superconducting half-dome in compressively strained bilayer nickelate thin films as a function of continuous tuning of oxygen stoichiometry. Starting from an optimally superconducting state, increasing oxygen stoichiometry gradually suppresses superconductivity toward a metallic phase, whereas decreasing oxygen stoichiometry drives a granular superconductor-to-insulator transition while leaving the superconducting onset intact. This half-dome structure can be understood to arise from the contrasting roles played by interstitial oxygen versus oxygen vacancies - namely the dominance of doping versus scattering. Notably, the half-dome emerges consistently across samples with different rare-earth combinations, with or without alkaline-earth doping, revealing a general feature of the bilayer nickelate phase diagram.

cond-mat.supr-con↗

arXiv2026

Designing heterostructures to control oxygen stoichiometry in helimagnetic perovskite strontium ferrite

A large challenge in determining the physics of helimagnetic SrFeO3 is in stabilizing the stoichiometric chemical phase over long enough time scales to conduct extensive measurements. Degradation in SrFeO3 manifests mainly as a crossover from metallic to insulating behavior. Using a combination of electronic transport and density functional theory, we show that this degradation is dominated by oxygen loss, possibly on the order of one percent. We further demonstrate that high quality SrFeO3 thin films can be stabilized long-term by combining a nanoscale band insulator capping layer with an ex situ ozone anneal. We show that this produces a nearly-pristine cation sublattice and preserves metallicity for at least several weeks. These results establish a reliable pathway for producing chemically stable SrFeO3 thin films, enabling reproducible studies of its unusual helimagnetism.

cond-mat.mtrl-sci↗

arXiv2026

Superconducting phase diagram of multi-layer square-planar nickelates

The discovery of superconductivity in square-planar nickelates has offered a rich materials platform to explore the origins of cuprate-like superconductivity. Experimental investigations however have largely been limited to the infinite-layer $R$NiO$_2$ ($R$=rare-earth) nickelates. Here, we construct a phase diagram of multi-layer square-planar Nd$_{n+1}$Ni$_n$O$_{2n+2}$ compounds and discover signatures of superconductivity for $n$ = 4 - 8. Upon decreasing the dimensionality $n$, the superconducting anisotropy evolves due to 4$f$ electron effects, and electronic structure characteristics approach cuprate-like behavior. Magnetic fluctuations persist from within the superconducting regime and into the over-doped, non-superconducting regime. Remarkably, the superconducting regime overlaps with that of chemically-doped infinite-layer nickelates, demonstrating underlying commonalities and distinct differences across varying structural realizations of square-planar nickelates. Our work establishes this layered template for creating new nickel-based superconductors.

cond-mat.supr-con↗

arXiv2026

Krypton-sputtered tantalum films for scalable high-performance quantum devices

Superconducting qubits based on tantalum (Ta) thin films have demonstrated the highest-performing microwave resonators and qubits. This makes Ta an attractive material for superconducting quantum computing applications, but, so far, direct deposition has largely relied on high substrate temperatures exceeding \SI{400}{\celsius} to achieve the body-centered cubic phase, BCC (\textalpha-Ta). This leads to compatibility issues for scalable fabrication leveraging standard semiconductor fabrication lines. Here, we show that changing the sputter gas from argon (Ar) to krypton (Kr) promotes BCC Ta synthesis on silicon (Si) at temperatures as low as \SI{200}{\celsius}, providing a wide process window compatible with back-end-of-the-line fabrication standards. Furthermore, we find these films to have substantially higher electronic conductivity, consistent with clean-limit superconductivity. We validated the microwave performance through coplanar waveguide resonator measurements, finding that films deposited at \SI{250}{\celsius} and \SI{350}{\celsius} exhibit a tight performance distribution at the state of the art. Higher temperature-grown films exhibit higher losses, in correlation with the degree of Ta/Si intermixing revealed by cross-sectional transmission electron microscopy. Finally, with these films, we demonstrate transmon qubits with a relatively compact, \SI{20}{\micro\meter} capacitor gap, achieving a median quality factor up to 14 million.

quant-ph↗

arXiv2026

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Epitaxial strain is a powerful means to engineer emergent phenomena in thin films and heterostructures. Here, we demonstrate that KTaO3, a cubic perovskite in bulk form, can be epitaxially strained into a highly tunable ferroelectric. KTaO3 films grown commensurate to SrTiO3 (001) substrates experience an in-plane strain of -2.1 % that transforms the cubic structure into a tetragonal polar phase with transition temperature of 475 K, consistent with our thermodynamic calculations. We show that the Curie temperature and the spontaneous electric polarization can be system- atically controlled with epitaxial strain. Scanning transmission electron microscopy reveals cooperative polar displacements of the potassium columns with respect to the neighboring tantalum columns at room temperature. Optical second-harmonic generation results are described by a tetragonal polar point group (4mm), indicating the emergence of a global polar ground state. We observe a ferroelectric hysteresis response, using metal-insulator-metal capacitor test structures. The results demon- strate a robust intrinsic ferroelectric state in epitaxially strained KTaO3 thin films.

cond-mat.mtrl-sci↗

arXiv2026

Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy

Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE), demonstrating single-oriented, monodomain growth of anisotropically strained thin films. Microstructural investigation is performed using synchrotron X-ray diffraction and scanning transmission electron microscopy. The tetravalent oxidation state of tantalum is confirmed using X-ray absorption and photoemission spectroscopy as well as electron energy-loss spectroscopy. Optical properties are investigated via spectroscopic ellipsometry and reveal a 0.3 eV Mott gap of the tantalum 5d electrons. Density-functional theory and group theoretical arguments are used to evaluate the limited stability of the rutile phase and reveal the potential to unlock a hidden metal-insulator transition concomitant with a structural phase transition to a distorted rutile phase, akin to NbO2. Our work expands the understanding of tantalum oxides and paves the way for their integration into next-generation electronic and photonic devices.

cond-mat.mtrl-sci↗

arXiv2025

Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire

We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of $0.5^\text{o}$, $2^\text{o}$, $4^\text{o}$, and $10^\text{o}$ towards m-axis. X-ray diffraction (XRD) scans reveal that the full width at half maximum of the rocking curves around the 1 1 1 reflection of these NbN films decreases with increasing miscut. Starting from 76 arcsecs on $0.5^\text{o}$ miscut, the FWHM reduces to almost 20 arcsecs on $10^\text{o}$ miscut sapphire indicating improved structural quality. Scanning transmission electron microscopy (STEM) images indicate that NbN on c-sapphire has around 10 nm critical thickness, irrespective of the substrate miscut, above which it turns columnar. The improved structural property is correlated with a marginal increment in superconducting transition temperature $T_\text{c}$ from 12.1 K for NbN on $0.5^\text{o}$ miscut sapphire to 12.5 K for NbN on $10^\text{o}$ miscut sapphire.

cond-mat.supr-con↗

arXiv2025

All-nitride superconducting qubits based on atomic layer deposition

The development of large-scale quantum processors benefits from superconducting qubits that can operate at elevated temperatures and be fabricated with scalable, foundry-compatible processes. Atomic layer deposition (ALD) is increasingly being adopted as an industrial standard for thin-film growth, particularly in applications requiring precise control over layer thickness and composition. Here, we report superconducting qubits based on NbN/AlN/NbN trilayers deposited entirely by ALD. By varying the number of ALD cycles used to form the AlN barrier, we achieve Josephson tunneling through barriers of different thicknesses, with critical current density spanning seven orders of magnitude, demonstrating the uniformity and versatility of the process. Owing to the high critical temperature of NbN, transmon qubits based on these all-nitride trilayers exhibit microsecond-scale relaxation times, even at temperatures above 300 mK. These results establish ALD as a viable low-temperature deposition technique for superconducting quantum circuits and position all-nitride ALD qubits as a promising platform for operation at elevated temperatures.

quant-ph↗

arXiv2025

Disorder-broadened topological Hall phase and anomalous Hall scaling in FeGe

Magnetic skyrmions are topologically protected spin textures that are promising candidates for low-power spintronic memory and logic devices. Realizing skyrmion-based devices requires an understanding of how structural disorder affects their stability and transport properties. This study uses Ne$^{+}$ ion irradiation at fluences from $10^{11}$ to $10^{14}$ ions-cm$^{-2}$ to systematically vary defect densities in 80 nm epitaxial FeGe films and quantify the resulting modifications to magnetic phase boundaries and electronic scattering. Temperature- and field-dependent Hall measurements reveal that increasing disorder progressively extends the topological Hall signal from a narrow window near 200\~K in pristine films down to 4\~K at the highest fluence, with peak amplitude more than doubling. Simultaneously, the anomalous Hall effect transitions from quadratic Berry curvature scaling to linear skew scattering behavior, with the skew coefficient increasing threefold. These results establish quantitative correlations between defect concentration, skyrmion phase space, and transport mechanisms in a chiral magnet. It demonstrates that ion-beam modification provides systematic control over both topological texture stability and electrical detectability.

cond-mat.mtrl-sci↗

arXiv2025

Mind the Gap -- Imaging Buried Interfaces in Twisted Oxide Moir\'es

The ability to tune electronic structure in twisted stacks of two-dimensional (2D) materials has motivated the exploration of similar moir\'e physics with twisted oxide membranes. Due to the intrinsic three-dimensional nature of bonding in many oxides, achieving atomic-level coupling is significantly more challenging than with van der Waals materials. Although clean interfaces with atomic-level proximity have been demonstrated in ceramic bicrystals using high-temperature and high-pressure processing to facilitate atomic diffusion that flattens rough interfaces, such conditions are not readily accessible when bonding oxide membranes. This study shows how topographic mismatch due to surface roughness of the membranes can restrict atomic-scale proximity at the interface to isolated patches even after contaminants and amorphous interlayers are eliminated. In interfaces between 2D materials and oxide membranes the reduced ability of the 2D material to conform to the membrane's step-terrace topography also limits atomic-scale contact. When imaging stacked membranes in projection, we find conventional through-focal imaging to be relatively insensitive to the buried interface, whereas electron ptychography detects structural variations on the order of a nanometer. These findings highlight interface roughness as a key challenge for the field of oxide twistronics and emphasize the need for reliable characterization methods, both in cross-section and projection.

cond-mat.mtrl-sci↗