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arXiv · 2511.13917

Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire

Anand Ithepalli·Saumya Vashishtha·Naomi Pieczulewski·Qiao Liu·Amit Rohan Rajapurohita·Matthew Barone·Darrell Schlom·David A. Muller·Huili Grace Xing·Debdeep Jena
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Abstract

We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of $0.5^\text{o}$, $2^\text{o}$, $4^\text{o}$, and $10^\text{o}$ towards m-axis. X-ray diffraction (XRD) scans reveal that the full width at half maximum of the rocking curves around the 1 1 1 reflection of these NbN films decreases with increasing miscut. Starting from 76 arcsecs on $0.5^\text{o}$ miscut, the FWHM reduces to almost 20 arcsecs on $10^\text{o}$ miscut sapphire indicating improved structural quality. Scanning transmission electron microscopy (STEM) images indicate that NbN on c-sapphire has around 10 nm critical thickness, irrespective of the substrate miscut, above which it turns columnar. The improved structural property is correlated with a marginal increment in superconducting transition temperature $T_\text{c}$ from 12.1 K for NbN on $0.5^\text{o}$ miscut sapphire to 12.5 K for NbN on $10^\text{o}$ miscut sapphire.

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Anand Ithepalli, Saumya Vashishtha, Naomi Pieczulewski, Qiao Liu, Amit Rohan Rajapurohita, Matthew Barone, Darrell Schlom, David A. Muller, Huili Grace Xing, Debdeep Jena. 2025-11-17. Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire. https://doi.org/10.1063/5.0312575

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