arXiv subjects

Cheng Song

Publications and source records attributed to Cheng Song.

At least 19 recordsLinked to original sources

arXiv2026

A Unified Theory of Deterministic Magnetic Switching

The deterministic switching of magnetic order parameters is critically important, as it forms the fundamental basis for manipulating information states in magnetic memory devices. This work presents a general theoretical framework that unifies the mechanisms of magnetic switching by introducing the concept of switching symmetry and establishing that the necessary condition for deterministic switching is the breaking of all switching symmetries, which can be achieved through asymmetric states, asymmetric barriers, and asymmetric torques. Our theory can successfully and universally explain all reported experimental cases of deterministic magnetic switching and provides unified and simple design principles for new switching devices of all magnetic materials without the need of complicated simulations.

cond-mat.other↗

arXiv2026

Room-temperature magnetic p-n junctions for charge-and-spin diodes

Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive latency, and high-power consumption in Si-based electronics, we develop magnetic p-n junctions composed of a p-type amorphous magnetic semiconductor (p-AMS) and n-type Si. These charge-and-spin junctions exhibit typical diode characteristics for charge current, along with distinctive spin diode features. By manipulating spin-polarized space charges, we observed a giant magnetic enhancement of approximately 24.36% at a breakdown current of 5 mA, and an impressive 29-fold increase in magnetic moments for p-AMS. The observed spin behavior is attributed to space charge effects or carrier depletion in the p-AMS with extended hole states.

cond-mat.mtrl-sci↗

arXiv2026

Electric field switching of altermagnetic spin-splitting in multiferroic skyrmions

Magnetic skyrmions are localized magnetic structures that retain their shape and stability over time, thanks to their topological nature. Recent theoretical and experimental progress has laid the groundwork for understanding magnetic skyrmions characterized by negligible net magnetization and ultrafast dynamics. Notably, skyrmions emerging in materials with altermagnetism, a novel magnetic phase featuring lifted Kramers degeneracy-have remained unreported until now. In this study, we demonstrate that BiFeO3, a multiferroic renowned for its strong coupling between ferroelectricity and magnetism, can transit from a spin cycloid to a Neel-type skyrmion under antidamping spin-orbit torque at room temperature. Strikingly, the altermagnetic spin splitting within BiFeO3 skyrmion can be reversed through the application of an electric field, revealed via the Circular photogalvanic effect. This quasiparticle, which possesses a neutral topological charge, holds substantial promise for diverse applications-most notably, enabling the development of unconventional computing systems with low power consumption and magnetoelectric controllability.

cond-mat.mtrl-sci↗

arXiv2025

KP-PINNs: Kernel Packet Accelerated Physics Informed Neural Networks

Differential equations are involved in modeling many engineering problems. Many efforts have been devoted to solving differential equations. Due to the flexibility of neural networks, Physics Informed Neural Networks (PINNs) have recently been proposed to solve complex differential equations and have demonstrated superior performance in many applications. While the L2 loss function is usually a default choice in PINNs, it has been shown that the corresponding numerical solution is incorrect and unstable for some complex equations. In this work, we propose a new PINNs framework named Kernel Packet accelerated PINNs (KP-PINNs), which gives a new expression of the loss function using the reproducing kernel Hilbert space (RKHS) norm and uses the Kernel Packet (KP) method to accelerate the computation. Theoretical results show that KP-PINNs can be stable across various differential equations. Numerical experiments illustrate that KP-PINNs can solve differential equations effectively and efficiently. This framework provides a promising direction for improving the stability and accuracy of PINNs-based solvers in scientific computing.

cs.CE↗

arXiv2025

Room-temperature high-average-power strong-field terahertz source based on industrial high-repetition-rate femtosecond laser

Free-space strong-field terahertz (THz) pulses, generated via optical rectification of femtosecond lasers in nonlinear crystals, are pivotal in various applications. However, conventional Ti:sapphire lasers struggle to produce high-average-power THz due to their limited output power. While kilowatt ytterbium lasers are increasingly adopted, their application in THz generation faces challenges: low optical-to-THz conversion efficiency (attributed to long pulse durations and low energy) and crystal damage under high pumping power. Here, we report a high-average-power strong-field THz source using a lithium niobate crystal pumped by a 1030-nm, 570-fs, 1-mJ, 50-kHz ytterbium femtosecond laser with tilted pulse front pumping (TPFP). By systematically optimizing TPFP implementations and comparing grating- and echelon-type configurations, we achieve a THz source with 64.5 mW average power at 42-W, 50-kHz pumping, and a focused peak electric field of 525 kV/cm at 0.83-mJ, 1-kHz operation. Additionally, we observe Zeeman torque signals in cobalt-iron ferromagnetic nanofilms. This high-repetition-rate, high-average-power THz system, combined with its potential capabilities in high signal-to-noise spectroscopy and imaging, promises transformative impacts in quantum matter manipulation, non-destructive testing, and biomedicine.

physics.optics↗

arXiv2025

Discovery of a large magnetic nonlinear Hall effect in an altermagnet

Since Edwin Halls groundbreaking discovery of the Hall effect in 1879, magnetism, spin, and quantization have been expanding the scope of Hall effects, continuously driving transformative progress in science and technology. Among them, the latest nonlinear Hall effect (NLHE), where longitudinal electric field tunes quantum geometry to generate nonlinear Hall voltage, attracts wide attention as a sensitive probe of topological phases across a wide range of materials. Here, we report a new Hall effect member: the magnetic nonlinear Hall effect (MNLHE), characterized by a quadratic Hall conductivity dependence on magnetic field, rather than electric field as in NLHE. This finding relies on an altermagnet, Mn5Si3 thin film, whose alternating-sign Berry curvatures ensure higher-order MNLHE clearly distinguishable from the first-order anomalous Hall effect. The observed quadratic dependence originates from chiral next-nearest-neighbor hopping processes that acquire magnetic-exchange-driven Zeeman energies and Haldane-like chiral flux phases. Remarkably, this MNLHE is non-analytic, as reversing the magnetic field flips the alternating spin-splitting bands and reverses the hopping chirality, which is absent in traditional NLHE. Beyond offering a distinctive transport fingerprint for altermagnet Mn5Si3 thin film, this MNLHE is large and unsaturated up to 60 T, providing opportunities for pulsed high-field sensing technologies in both fundamental researches and engineering applications.

cond-mat.mtrl-sci↗

arXiv2024

Electrical Manipulation of Spin Splitting Torque in Altermagnetic RuO2

Due to nonrelativistic altermagnetic spin splitting effect (ASSE), altermagnets can generate time-reversal-odd spin current and spin splitting torque (SST) with spin polarization parallel to the N\'eel vector. Hence the effective manipulation of SST would provide plenty of opportunities for designable spintronic devices, which remains elusive. Here, the electrical control of SST is achieved in altermagnetic RuO2, based on controllable N\'eel vector of RuO2 and N\'eel vector-dependent generation of SST. We demonstrate the current-induced switching of N\'eel vector via spin-orbit torque in RuO2 films, according to the reversible polarity of electrical transport measurements and X-ray magnetic linear dichroism (XMLD). The XMLD also unprecedentedly demonstrates that N\'eel vector really exists in altermagnets. The switching of N\'eel vector to the current direction and resultantly enhanced spin polarization parallel to the N\'eel vector brings about stronger ASSE-induced spin current. Our findings not only enrich the properties of altermagnets but also pave the way for high speed memories and nano-oscillators with excellent controllability and efficiency.

cond-mat.mtrl-sci↗

arXiv2024

Probing the N\'eel order in altermagnetic RuO2 films by X-ray magnetic linear dichroism

The emerging altermagnetic RuO2 with both compensated magnetic moments and broken time-reversal symmetry possesses nontrivial magneto-electronic responses and nonrelativistic spin currents, which are closely related to magnetic easy axis. To probe the N\'eel order in RuO2, we conducted Ru M3-edge X-ray magnetic linear dichroism (XMLD) measurement. For epitaxial RuO2 films, characteristic XMLD signals can be observed in either RuO2(100) and RuO2(110) at normal incidence or RuO2(001) at oblique incidence, and the signals disappear when test temperature exceeds N\'eel temperature. For nonepitaxial RuO2 films, the flat lines in the XMLD patterns of RuO2(100) and RuO2(110) demonstrate that there is no in-plane uniaxial alignment of N\'eel order in these samples, due to the counterbalanced N\'eel order of the twin crystals evidenced by X-ray diffraction phi-scan measurements. Our experimental results unambiguously demonstrate the antiferromagnetism in RuO2 films and reveal the spatial relation of N\'eel order to be parallel with RuO2 [001] crystalline axis. These research findings would deepen our understanding of RuO2 and other attractive altermagnetic materials applied in the field of spintronics.

cond-mat.mtrl-sci↗

arXiv2024

Lead-free Hybrid Perovskite: An Efficient Room Temperature Spin Generator via Large Interfacial Rashba effect

Two-dimensional (2D) hybrid organic-inorganic perovskite (HOIP) demonstates great potential for developing flexible and wearable spintronic devices, by serving as spin sources via the bulk Rashba effect (BRE). However, the practical application of BRE in 2D HOIP faces huge challenges, particularly due to the toxicity of lead, which is crucial for achieving large spin-orbit coupling, and the restrictions in 2D HOIP candidates to meet specific symmetry-breaking requirements. To overcome these obstacles, we design a strategy to exploit the interfacial Rashba effect (IRE) of lead-free 2D HOIP (C6H5CH2CH2NH3)2CuCl4 (PEA-CuCl), manifesting as an efficient spin generator at room temperature. IRE of PEA-CuCl originates from the large orbital hybridization at the interface between PEA-CuCl and adjacent ferromagnetic layers. Spin-torque ferromagnetic resonance measurements further quantify a large Rashba effective field of 14.04 Oe per 10^11 A m-2, surpassing those of lead-based HOIP and traditional all-inorganic heterojunctions with noble metals. Our lead-free 2D HOIP PEA-CuCl, which harnesses large IRE for spin generation, is efficient, nontoxic, and economic, offering huge promise for future flexible and wearable spintronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Tunable Quantum Anomalous Hall Effect via Crystal Order in Spin-Splitting Antiferromagnets

Quantum anomalous Hall (QAH) effect provides dissipationless chiral channels for spin transport, expected as an outstanding candidate in future low-power quantum computation. The spin-splitting band structure is vital for obtaining QAH effect in topological systems, with ferromagnetism indispensable to manipulate the Chern number. Herein, we challenge this wisdom by proposing tunable QAH effect in spin-splitting antiferromagnets with zero magnetization. Since the spin splitting of these unique magnets originates from the alternate crystal environment, the Chern number can be modulated not only by the conventional magnetic order, but also by the crystal order, opening an additional dimension for tuning QAH effect. Our concept is illustrated based on two-dimensional (2D) MnBi2Te4 (MBT) with even septuple layers (SLs), a typical axion insulator with fully magnetic compensation. By interlayer rotation and translation operations, sublattices of MBT with opposite magnetizations are no longer connected by inversion or mirror symmetries, leading to the transition to the QAH insulator. The flexible stacking of 2D materials enables the reversible Chern number by crystal design. Our work fundamentally reveals the crystal-order-dependent QAH effect in spin-splitting antiferromagnets, which would advance QAH effect-based devices towards high controllability, integration density and operation speed.

cond-mat.mes-hall↗

arXiv2024

Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect

The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here we apply the device structural engineering to realize an in-plane inhomogeneous temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic resistance whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the applied current. By optimizing the aspect ratio of convex-shaped device, the effective temperature gradient can reach up to 0.3 K/$\mu$m along the y-direction, leading to a GANE signal of 28.3 $\mu$V. Moreover, we demonstrate electrical write and read operations in the perpendicularly-magnetized Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories

cond-mat.mes-hall↗

arXiv2024

Self-supervised Gait-based Emotion Representation Learning from Selective Strongly Augmented Skeleton Sequences

Emotion recognition is an important part of affective computing. Extracting emotional cues from human gaits yields benefits such as natural interaction, a nonintrusive nature, and remote detection. Recently, the introduction of self-supervised learning techniques offers a practical solution to the issues arising from the scarcity of labeled data in the field of gait-based emotion recognition. However, due to the limited diversity of gaits and the incompleteness of feature representations for skeletons, the existing contrastive learning methods are usually inefficient for the acquisition of gait emotions. In this paper, we propose a contrastive learning framework utilizing selective strong augmentation (SSA) for self-supervised gait-based emotion representation, which aims to derive effective representations from limited labeled gait data. First, we propose an SSA method for the gait emotion recognition task, which includes upper body jitter and random spatiotemporal mask. The goal of SSA is to generate more diverse and targeted positive samples and prompt the model to learn more distinctive and robust feature representations. Then, we design a complementary feature fusion network (CFFN) that facilitates the integration of cross-domain information to acquire topological structural and global adaptive features. Finally, we implement the distributional divergence minimization loss to supervise the representation learning of the generally and strongly augmented queries. Our approach is validated on the Emotion-Gait (E-Gait) and Emilya datasets and outperforms the state-of-the-art methods under different evaluation protocols.

cs.CV↗

arXiv2024

Electrical-controllable antiferromagnet-based tunnel junction

Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of interfacial exchange bias and exchange spring in IrMn. Encoding information states 0 and 1 is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring andexchange bias, 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrical-controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory.

physics.app-ph↗

arXiv2024

Observation of non-volatile anomalous Nernst effect in altermagnet with collinear N\'eel vector

Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear N\'eel vector will bring more opportunities to construct magnetic-field-immune and ultrafast transverse thermoelectric converters, but remains unachieved for long. It is due to the degenerated band structure of traditional collinear compensated magnet excludes non-zero Berry curvature. Here, we realize non-volatile ANE in altermagnet Mn5Si3 thin film with collinear Neel vector, whose unique alternating spin-splitting band structure plays vital role in creating non-zero Berry curvature and hotpots of anomalous Nernst conductivity near band intersections. Interestingly, ANE is relatively weak in stoichiometric Mn5Si3, but undergoes a sixfold enhancement through strategically raising the Fermi level by additional Mn doping, indicating sensitive intrinsic influence from specific location of the Fermi level on ANE in altermagnet. Moreover, our investigation reveals a unique Neel-vector-dependent temperature-scaling relationship of anomalous Nernst conductivity in Mn5Si3. Our work not only fills a longstanding gap by confirming the presence of non-volatile ANE in collinear compensated magnet, but also enlightens thermoelectric physics related to exotic spin-splitting band structure in altermagnet.

cond-mat.mtrl-sci↗

arXiv2024

Crystal design of altermagnetism

Symmetry plays a fundamental role in condensed matter. The unique entanglement between magnetic sublattices and alternating crystal environment in altermagnets provides a unique opportunity for designing magnetic space symmetry. There have been extensive experimental efforts concentrated on tuning the Neel vector to reconstruct altermagnetic symmetry. However, it remains challenging to modulate the altermagnetic symmetry through the crystal aspect. Here, the crystal design of altermagnetism is successfully realized, by breaking glide mirrors and magnetic mirrors of the (0001) crystallographic plane in CrSb films via crystal distortion. We establish a locking relationship between altermagnetic symmetry and the emergent Dzyaloshinskii-Moriya (DM) vectors in different CrSb films, realizing unprecedentedly room-temperature spontaneous anomalous Hall effect in an altermagnetic metal. The concept of exchange-coupling torques is broadened to include both antiferromagnetic exchange-coupling torque and DM torque. Their relationship is designable, determining electrical manipulation modes, e.g., field-assisted switching for CrSb(1-100)/Pt and field-free switching for W/CrSb(11-20). Particularly, the unprecedentedly field-free 100-percent switching of Neel vectors is realized by making these two torques parallel or antiparallel, dependent on Neel vector orientation. Besides unravelling the rich mechanisms for electrical manipulation of altermagnetism rooted in broadened concept of exchange-coupling torques, we list other material candidates and propose that crystal design of altermagnetism would bring rich designability to magnonics, topology, etc.

cond-mat.mtrl-sci↗

arXiv2024

Electrical 180o switching of N\'eel vector in spin-splitting antiferromagnet

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of N\'eel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite N\'eel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of N\'eel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the N\'eel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.

cond-mat.mtrl-sci↗

arXiv2024

Electrical switching of the perpendicular Neel order in a collinear antiferromagnet

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the N\'eel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the N\'eel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA.

physics.app-ph↗

arXiv2023

CGS-Mask: Making Time Series Predictions Intuitive for All

Artificial intelligence (AI) has immense potential in time series prediction, but most explainable tools have limited capabilities in providing a systematic understanding of important features over time. These tools typically rely on evaluating a single time point, overlook the time ordering of inputs, and neglect the time-sensitive nature of time series applications. These factors make it difficult for users, particularly those without domain knowledge, to comprehend AI model decisions and obtain meaningful explanations. We propose CGS-Mask, a post-hoc and model-agnostic cellular genetic strip mask-based saliency approach to address these challenges. CGS-Mask uses consecutive time steps as a cohesive entity to evaluate the impact of features on the final prediction, providing binary and sustained feature importance scores over time. Our algorithm optimizes the mask population iteratively to obtain the optimal mask in a reasonable time. We evaluated CGS-Mask on synthetic and real-world datasets, and it outperformed state-of-the-art methods in elucidating the importance of features over time. According to our pilot user study via a questionnaire survey, CGS-Mask is the most effective approach in presenting easily understandable time series prediction results, enabling users to comprehend the decision-making process of AI models with ease.

cs.AI↗