Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect

Jiuming Liu; Bin Rong; Hua Bai; Xinqi Liu; Yanghui Liu; Yifan Zhang; Yujie Xiao; Yuzhen Liang; Qi Yao; Liyang Liao; Yumeng Yang; Cheng Song; Xufeng Kou

arXiv · 2409.09587

Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect

Jiuming Liu·Bin Rong·Hua Bai·Xinqi Liu·Yanghui Liu·Yifan Zhang·Yujie Xiao·Yuzhen Liang·Qi Yao·Liyang Liao·Yumeng Yang·Cheng Song·Xufeng Kou

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Abstract

The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here we apply the device structural engineering to realize an in-plane inhomogeneous temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic resistance whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the applied current. By optimizing the aspect ratio of convex-shaped device, the effective temperature gradient can reach up to 0.3 K/$\mu$m along the y-direction, leading to a GANE signal of 28.3 $\mu$V. Moreover, we demonstrate electrical write and read operations in the perpendicularly-magnetized Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories

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Jiuming Liu, Bin Rong, Hua Bai, Xinqi Liu, Yanghui Liu, Yifan Zhang, Yujie Xiao, Yuzhen Liang, Qi Yao, Liyang Liao, Yumeng Yang, Cheng Song, Xufeng Kou. 2024-09-15. Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect. https://arxiv.org/abs/2409.09587

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