arXiv subjects

C. Berger

Publications and source records attributed to C. Berger.

At least 19 recordsLinked to original sources

arXiv2026

Experimental demonstration of Flying-Focus enhanced Thomson scattering

We report the experimental demonstration of a spatiotemporally engineered "Flying-Focus" laser pulse for enhanced x-ray generation in relativistic Thomson scattering. A combination of longitudinal chromatic aberration, angular dispersion, and group delay dispersion was applied to an ultrashort relativistically intense laser pulse to control the motion of its focal point. Precise tuning of the group delay dispersion was used to match the velocity of the focus to the trajectory of a counterpropagating electron bunch, produced by a laser wakefield accelerator. This prolonged the Thomson scattering interaction while reducing nonlinear effects, leading to an enhanced x-ray yield. The approach has the potential to increase the spectral density and brightness of the x-ray beam by orders of magnitude compared to equivalent focusing without spatiotemporal control. This experiment establishes a new technique for structured-light control at high intensity, demonstrating the realization of dynamic intensity structures that enhance light-matter interactions and for the generation of ultra-bright radiation sources.

physics.optics↗

arXiv2019

Valley and Zeeman Splittings in Multilayer Epitaxial Graphene Revealed by Circular Polarization Resolved Magneto-infrared Spectroscopy

Circular polarization resolved magneto-infrared studies of multilayer epitaxial graphene (MEG) are performed using tunable quantum cascade lasers in high magnetic fields up to 17.5 T. Landau level (LL) transitions in the monolayer and bilayer graphene inclusions of MEG are resolved, and considerable electron-hole asymmetry is observed in the extracted electronic band structure. For monolayer graphene, a four-fold splitting of the $n=0$ to $n=1$ LL transition is evidenced and attributed to the lifting of the valley and spin degeneracy of the zeroth LL and the broken electron-hole symmetry. The magnetic field dependence of the splitting further reveals its possible mechanisms. The best fit to experimental data yields effective $g$-factors, $g^*_{VS}=6.7$ and $g^*_{ZS}=4.8$, for the valley and Zeeman splitting, respectively.

cond-mat.mes-hall↗

arXiv2018

Slow noncollinear Coulomb scattering in the vicinity of the Dirac point in graphene

The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k-directions pointing radially away from the Dirac point. Our study reveals, however, that in almost intrinsic graphene full thermalization in all directions relying on noncollinear scattering is much slower. For low photon energies, carrier-optical-phonon processes are strongly suppressed and Coulomb mediated noncollinear scattering is remarkably slow, namely on a ps timescale. This effect is very promising for infrared and THz devices based on hot carrier effects.

cond-mat.mes-hall↗

arXiv2014

The VVV Templates Project. Towards an Automated Classification of VVV Light-Curves. I. Building a database of stellar variability in the near-infrared

Context. The Vista Variables in the Vía Láctea (VVV) ESO Public Survey is a variability survey of the Milky Way bulge and an adjacent section of the disk carried out from 2010 on ESO Visible and Infrared Survey Telescope for Astronomy (VISTA). VVV will eventually deliver a deep near-IR atlas with photometry and positions in five passbands (ZYJHK_S) and a catalogue of 1-10 million variable point sources - mostly unknown - which require classifications. Aims. The main goal of the VVV Templates Project, that we introduce in this work, is to develop and test the machine-learning algorithms for the automated classification of the VVV light-curves. As VVV is the first massive, multi-epoch survey of stellar variability in the near-infrared, the template light-curves that are required for training the classification algorithms are not available. In the first paper of the series we describe the construction of this comprehensive database of infrared stellar variability. Methods. First we performed a systematic search in the literature and public data archives, second, we coordinated a worldwide observational campaign, and third we exploited the VVV variability database itself on (optically) well-known stars to gather high-quality infrared light-curves of several hundreds of variable stars. Results. We have now collected a significant (and still increasing) number of infrared template light-curves. This database will be used as a training-set for the machine-learning algorithms that will automatically classify the light-curves produced by VVV. The results of such an automated classification will be covered in forthcoming papers of the series.

astro-ph.SR↗

arXiv2014

Room temperature broadband coherent terahertz emission induced by dynamical photon drag in graphene

Nonlinear couplings between photons and electrons in new materials give rise to a wealth of interesting nonlinear phenomena. This includes frequency mixing, optical rectification or nonlinear current generation, which are of particular interest for generating radiation in spectral regions that are difficult to access, such as the terahertz gap. Owing to its specific linear dispersion and high electron mobility at room temperature, graphene is particularly attractive for realizing strong nonlinear effects. However, since graphene is a centrosymmetric material, second-order nonlinearities a priori cancel, which imposes to rely on less attractive third-order nonlinearities. It was nevertheless recently demonstrated that dc-second-order nonlinear currents as well as ultrafast ac-currents can be generated in graphene under optical excitation. The asymmetry is introduced by the excitation at oblique incidence, resulting in the transfer of photon momentum to the electron system, known as the photon drag effect. Here, we show broadband coherent terahertz emission, ranging from about 0.1-4 THz, in epitaxial graphene under femtosecond optical excitation, induced by a dynamical photon drag current. We demonstrate that, in contrast to most optical processes in graphene, the next-nearest-neighbor couplings as well as the distinct electron-hole dynamics are of paramount importance in this effect. Our results indicate that dynamical photon drag effect can provide emission up to 60 THz opening new routes for the generation of ultra-broadband terahertz pulses at room temperature.

physics.optics↗

arXiv2014

Film structure of epitaxial graphene oxide on SiC: Insight on the relationship between interlayer spacing, water content, and intralayer structure

Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manageable chemical complexity, thereby opening opportunities to accelerate both fundamental understanding and technological applications of this form of graphene oxide films. Here, we investigate the vertical inter-layer structure of these ultra-thin oxide films. X-ray diffraction, atomic force microscopy, and IR experiments show that the multilayer films exhibit excellent inter-layer registry, little amount (<10%) of intercalated water, and unexpectedly large interlayer separations of about 9.35 Å. Density functional theory calculations show that the apparent contradiction of "little water but large interlayer spacing in the graphene oxide films" can be explained by considering a multilayer film formed by carbon layers presenting, at the nanoscale, a non-homogenous oxidation, where non-oxidized and highly oxidized nano-domains coexist and where a few water molecules trapped between oxidized regions of the stacked layers are sufficient to account for the observed large inter-layer separations. This work sheds light on both the vertical and intra-layer structure of graphene oxide films grown on silicon carbide, and more in general, it provides novel insight on the relationship between inter-layer spacing, water content, and structure of graphene/graphite oxide materials.

cond-mat.mtrl-sci↗

arXiv2013

Magnetoplasmons in quasi-neutral epitaxial graphene nanoribbons

We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene.

cond-mat.mes-hall↗

arXiv2012

Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene

Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics, and spin-based quantum computing. As a result, the detection, characterization, and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical-response and dual microwave-induced resonances in the dc-resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time, and the sub-lattice degeneracy-splitting at zero-magnetic-field.

cond-mat.mes-hall↗

arXiv2012

Experimental observation of nanoscale radiative heat flow due to surface plasmons in graphene and doped silicon

Owing to its two dimensional electronic structure, graphene exhibits many unique properties. One of them is a wave vector and temperature dependent plasmon in the infrared range. Theory predicts that due to these plasmons, graphene can be used as a universal material to enhance nanoscale radiative heat exchange for any dielectric substrate. Here we report on radiative heat transfer experiments between SiC and a SiO2 sphere which have non matching phonon polariton frequencies, and thus only weakly exchange heat in near field. We observed that the heat flux contribution of graphene epitaxially grown on SiC dominates at short distances. The influence of plasmons on radiative heat transfer is further supported with measurements for doped silicon. These results highlight graphenes strong potential in photonic nearfield and energy conversion devices.

cond-mat.mes-hall↗

arXiv2012

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.

cond-mat.mes-hall↗

arXiv2012

Resonant Excitation of Graphene K-Phonon and Intra-Landau-Level Excitons in Magneto-Optical Spectroscopy

Precise infrared magnetotransmission experiments have been performed in magnetic fields up to 32 T on a series of multilayer epitaxial graphene samples. We observe changes in the spectral features and broadening of the main cyclotron transition when the incoming photon energy is in resonance with the lowest Landau level separation and the energy of a K point optical phonon. We have developed a theory that explains and quantitatively reproduces the frequency and magnetic field dependence of the phenomenon as the absorption of a photon together with the simultaneous creation of an intervalley, intra-Landau-level exciton, and a K phonon.

cond-mat.mes-hall↗

arXiv2011

Carrier scattering from dynamical magneto-conductivity in quasi-neutral epitaxial graphene

The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanism and carrier mobilities in the graphene system investigated.

cond-mat.mes-hall↗

arXiv2011

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments.

cond-mat.mtrl-sci↗

arXiv2011

Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.

cond-mat.mes-hall↗

arXiv2010

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material.

cond-mat.mes-hall↗

arXiv2010

Effect of a magnetic field on the two-phonon Raman scattering in graphene

We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33 T. At fields up to 5--10 T the changes are quadratic in the field while they become linear at higher magnetic fields. This effect is explained by the curving of the quasiclassical trajectories of the photo-excited electrons and holes in the magnetic field, which enables us (i) to extract the electron inelastic scattering rate, and (ii) to conclude that electronic scattering accounts for about half of the measured width of the 2D peak.

cond-mat.mes-hall↗

arXiv2010

Directed self-organization of graphene nanoribbons on SiC

Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurements, and electrical characterization of prototypic graphene devices is presented. Fabrication of > 10,000 top-gated graphene transistors on a 0.24 cm2 SiC chip demonstrates scalability of this process and represents the highest density of graphene devices reported to date.

cond-mat.mtrl-sci↗

arXiv2010

Structure and electronic properties of epitaxial graphene grown on SiC

We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane.

cond-mat.mtrl-sci↗