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arXiv · 1010.1767

Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

M. Orlita·C. Faugeras·J. Borysiuk·J. M. Baranowski·W. Strupinski·M. Sprinkle·C. Berger·W. A. de Heer·D. M. Basko·G. Martinez·M. Potemski
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Abstract

Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.

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M. Orlita, C. Faugeras, J. Borysiuk, J. M. Baranowski, W. Strupinski, M. Sprinkle, C. Berger, W. A. de Heer, D. M. Basko, G. Martinez, M. Potemski. 2011-01-23. Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene. https://doi.org/10.1103/physrevb.83.125302

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