arXiv subjects

Atanu Patra

Publications and source records attributed to Atanu Patra.

9 recordsLinked to original sources

arXiv2026

Charge Tunable Optical Nonlinearity of Moir\'e Exciton-Polaritons

Transition metal dichalcogenides represent a versatile platform to study strong light-matter interactions based on excitons and electrons in ordered lattices. Twist-engineering of moir\'e structures further enables the manipulation of the polaritonic nonlinearities via engineering the exciton landscape on the nanoscale. In this work, we demonstrate in-situ control of the optical saturation-based nonlinearity of moir\'e exciton-polaritons by phase space restriction via charge doping. Strong exciton-photon coupling is established in a gate-controllable MoTe$_2$-MoSe$_2$ heterobilayer, embedded in a spectrally-tunable open cavity. A small gate voltage can effectively lower the necessary polariton density by one order of magnitude to achieve a similar nonlinear saturation effect as in the charge-neutral case. Our microscopic description successfully explains the observed phenomena in the framework of Pauli blocking for the moir\'e superlattices with charge preoccupation.

cond-mat.mes-hall↗

arXiv2026

Deterministic Transferable Planar Dielectric Mirrors for Investigating Strong Light-Matter Coupling

Optical cavities play a central role in photonic and quantum technologies by enhancing light-matter interactions. In semiconductor microcavities, achieving high quality (Q) factors typically relies on sophisticated epitaxial growth techniques, such as molecular beam epitaxy, which offer atomic-scale precision but are costly and limited in material compatibility. For dielectric microcavities, high Q factors can be achieved using dielectric Bragg mirrors. However, conventional deposition techniques for the top mirrors, such as plasma-enhanced chemical vapor deposition or sputtering, can damage embedded emitters. This limitation is particularly severe for van der Waals materials, especially atomically thin semiconductors. Moreover, the conventional top-mirror deposition can cover or degrade predefined metal contacts. Recovering electrical access typically requires additional lithography and etching steps. Here, a deterministic dry-transfer approach is developed to fabricate complete dielectric microcavities using both top and bottom SiO_2/TiO_2 Bragg mirrors without post-growth lift-off processes, reaching a Q factor ~ 4x10^3. Using a WS_2 monolayer as the active medium, clear signatures of strong exciton-photon coupling are observed at both room temperature and cryogenic temperatures. These results demonstrate an efficient cavity fabrication approach that preserves the integrity of the emitter of layered materials, enabling next generation integrated photonic devices.

physics.optics↗

arXiv2025

Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thickness. Controlling their light emission electrically is a crucial step towards realizing practical nanoscale optoelectronic devices such as light-emitting diodes and optical modulators. However, photoluminescence (PL) quenching in van der Waals TMDC/metal heterostructures, caused by ultrafast interlayer charge or energy transfer, impedes such electrical modulation. Here, we investigate monolayer-MoSe2/bulk-NbSe2 heterostructures and demonstrate that a vertical electric field can effectively recover the PL intensity up to ~ 80% of bare-MoSe2. Furthermore, our analysis reveals that the room temperature PL intensity can be tuned by nearly three orders of magnitude in bare-MoSe2 and by about one order of magnitude in MoSe2/NbSe2 heterostructures. First-principles calculations incorporating spin-orbit coupling reveal that the perpendicular electric fields drive a transition from a direct to an indirect bandgap, fundamentally altering the optical response in the heterostructure. Unlike bare-MoSe2, the heterostructure exhibits a pronounced thermal dependence of the enhancement factor, implying that exciton lifetime dominates over interfacial transfer processes. Our findings demonstrate reversible, electric-field-driven PL control at a TMDC/metal interface, providing a pathway to electrically tunable light emission and improved contact engineering in two-dimensional optoelectronic devices.

physics.app-ph↗

arXiv2025

Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

Negatively charged boron vacancies ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) are emerging as promising solid-state spin qubits due to their optical accessibility, structural simplicity, and compatibility with photonic platforms. However, quantifying the density of such defects in thin hBN flakes has remained elusive, limiting progress in device integration and reproducibility. Here, we present an all-optical method to quantify $\mathrm{V_B^-}$ defect density in hBN by correlating Raman and photoluminescence (PL) signatures with irradiation fluence. We identify two defect-induced Raman modes, D1 and D2, and assign them to vibrational modes of $\mathrm{V_B^-}$ using polarization-resolved Raman measurements and density functional theory (DFT) calculations. By adapting a numerical model originally developed for graphene, we establish an empirical relationship linking Raman (D1, $E_\mathrm{2g}$) and PL intensities to absolute defect densities. This method is universally applicable across various irradiation types and uniquely suited for thin flakes, where conventional techniques fail. Our approach enables accurate, direct, and non-destructive quantification of spin defect densities down to $10^{15}$ defects/ cm${}^3$, offering a powerful tool for optimizing and benchmarking hBN for quantum optical applications.

quant-ph↗

arXiv2024

Giant light emission enhancement in strain-engineered InSe/MS$_2$ (M=Mo,W) van der Waals heterostructures

Two-dimensional crystals stack together through weak van der Waals (vdW) forces, offering unlimited possibilities to play with layer number, order and twist angle in vdW heterostructures (HSs). The realisation of high-performance optoelectronic devices, however, requires the achievement of specific band alignments, $k$-space matching between conduction band minima and valence band maxima, as well as efficient charge transfer between the constituent layers. Fine tuning mechanisms to design ideal HSs are lacking. Here, we show that layer-selective strain engineering can be exploited as an extra degree of freedom in vdW HSs to tailor their band alignment and optical properties. To that end, strain is selectively applied to MS$_2$ (M=Mo,W) monolayers in InSe/MS$_2$ HSs. This triggers a giant PL enhancement of the highly tuneable but weakly emitting InSe by one to three orders of magnitude. Resonant PL excitation measurements, supported by first-principle calculations, provide evidence of a strain-activated direct charge transfer from the MS$_2$ MLs toward InSe. This significant emission enhancement achieved for InSe widens its range of applications for optoelectronics.

cond-mat.mtrl-sci↗

arXiv2019

Strain distribution and thermal strain relaxation in MOVPE grown hBN films on sapphire substrates

Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these films of relatively large size are potential candidates to be employed in designing real devices, they exhibit wrinkling. The formation of wrinkles is a key signature of strain distribution in a film. Raman imaging has been utilized to study the residual strain distribution in these wrinkled hBN films. An increase in the overall compressive strain in the films with an increase in the layer thickness has been observed. To find whether the residual lattice strain in the films can be removed by a thermal treatment, temperature dependent Raman measurements of these films are carried out. The study demonstrates that the thermal rate of strain evolution is higher in the films of lower thickness than in the thicker films. This observation further provides a possible explanation for the variation of strain in the as-grown films. An empirical relation has been proposed for estimating the residual strain from the morphology of the films. We have also shown that the residual strain can be partially released by the delamination of the films.

cond-mat.mtrl-sci↗

arXiv2018

Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures

We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of each system is a semiconductor, zincblende-InSb, and wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb_(0.5)As_(0.5) heterostructure renders altered band gaps with different characteristics (i.e. direct or indirect). The study holds promise for fabricating heterostructures, in which the modulation of the thickness of the layers changes the number of carrier pockets in these systems.

cond-mat.mtrl-sci↗

arXiv2016

Mapping of Electronic Band Gap along the Axis of Single InAs/InSbxAs1-x Heterostructured Nanowire

We report the graded electronic band gap along the axis of individual heterostructured WZ-ZB InAs/InSb0.12As0.88 nanowires. Resonance Raman imaging has been exploited to map the axial variation in the second excitation gap energy (E1) at the high symmetry point (L point) of the Brillouin zone. We relate the origin of the observed evolution of the gap energy to the fine tuning of the alloy composition from the tip towards the interface of the nanowire. The electronic band structures of InAs, InSb and InSbxAs1-x alloy systems at x=0.125, 0.25, 0.50, 0.75 and 0.875, using all electron density functional theory code Wien2k, are reported. The measured band gap along the axis of the InAs/InSb0.12As0.88 nanowire is correlated with the calculated gap energy at the A point and the L point of the Brillouin zone for InAs and InSb0.125As0.875, respectively. We draw a one-to-one correspondence between the variation of the E1 gap and the fundamental E0 gap in the calculated electronic band structure and propose the graded fundamental gap energy across the axis of the nanowire.

cond-mat.mes-hall↗

arXiv2015

Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires

The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.

cond-mat.mtrl-sci↗