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arXiv · 1506.00401

Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires

Atanu Patra·Jaya Kumar Panda·Anushree Roy·Mauro Gemmi·Jérémy David·Daniele Ercolani·Lucia Sorba
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Abstract

The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.

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Atanu Patra, Jaya Kumar Panda, Anushree Roy, Mauro Gemmi, Jérémy David, Daniele Ercolani, Lucia Sorba. 2015-06-01. Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires. https://doi.org/10.1063/1.4929979

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