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Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

I. Hapke-Wurst·U. Zeitler·U. F. Keyser·K. Pierz·Z. Ma·R. J. Haug
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Abstract

We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.

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I. Hapke-Wurst, U. Zeitler, U. F. Keyser, K. Pierz, Z. Ma, R. J. Haug. 2002-10-17. Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters. https://doi.org/10.1063/1.1555712

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