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arXiv · 2604.08994

Giant resonant nonlinear THz valley Hall effect in 2D Dirac semiconductors

V. N. Ivanova·V. M. Kovalev·I. G. Savenko
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Abstract

We predict a giant cyclotron resonance in the nonlinear valley Hall response of inversion-asymmetric two-dimensional semiconductors subjected to crossed terahertz electric and static magnetic fields. By employing a two-band Hamiltonian that incorporates both linear and quadratic in momentum terms, thereby capturing the essential orbital texture and broken inversion symmetry, we develop a kinetic theory that accounts for antisymmetric skew scattering from impurities. Solving the Boltzmann transport equation we uncover resonant photocurrents that exhibit a sharp, polarity-switching cyclotron peak and a nontrivial polarization response dictated by the underlying D3h crystal symmetry. Our results establish a universal mechanism for frequency-selective, phase-sensitive valley current control, directly accessible in monolayer transition metal dichalcogenides. This work provides a pathway for harnessing resonant nonlinear transport in valleytronic and terahertz optoelectronic devices.

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V. N. Ivanova, V. M. Kovalev, I. G. Savenko. 2026-04-10. Giant resonant nonlinear THz valley Hall effect in 2D Dirac semiconductors. https://arxiv.org/abs/2604.08994

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