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Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

Igor Zutic·Jaroslav Fabian·S. Das Sarma
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Abstract

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.

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Igor Zutic, Jaroslav Fabian, S. Das Sarma. 2001-03-22. Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells. https://doi.org/10.1103/physrevb.64.121201

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