arXiv subjects

Jaroslav Fabian

Publications and source records attributed to Jaroslav Fabian.

At least 19 recordsLinked to original sources

arXiv2026

Ferroelectric-controllable spin-orbit torque in two-dimensional multiferroic heterostructure

Spin-orbit torque (SOT), which enables electrical control of magnetization, plays a crucial role in the development of next-generation spintronic devices. Realizing SOT in two-dimensional van der Waals systems, together with achieving efficient nonvolatile manipulation via ferroelectricity, would be highly beneficial for the implementation of tunable logic devices with enhanced storage density. In this work, based on first-principles calculation and using a multiferroic Fe$_{3}$GeTe$_{2}$/In$_{2}$Se$_{3}$ heterostructure as a representative example, we demonstrate that switching the ferroelectric polarization of the In$_{2}$Se$_{3}$ layer induces a pronounced modification in the magnetization-dependent distribution of torkance within the heterostructure. Specifically, when the magnetization is in the plane, where the torque is maximal, reversing the polarization of In$_{2}$Se$_{3}$ from upward to downward enhances the total torkance to more than 150% of its original value. This substantial variation primarily originates from the polarization-induced modulation of the $z$ component of the time-reversal-odd torkance, which is mainly associated with an approximately 233% change in the atomic-resolved torque contributed from the middle Fe layer in Fe$_{3}$GeTe$_{2}$ layer. Further analysis reveals that the electronic states near $\Gamma$ on the Fermi surface undergo significant reconstruction upon polarization switching, which is responsible for the observed variation in the time-reversal-odd torque. Our results not only provide new insights into the functional potential of van der Waals multiferroic heterostructures, but also offer a viable strategy for achieving electrically tunable SOT, paving the way for future programmable spintronic devices.

cond-mat.mes-hall↗

arXiv2026

Anatomy of Spin--Orbit Torques in Monolayer Fe$_3$GeTe$_2$ and Fe$_3$GaTe$_2$: Insights from atomistic and momentum-space decompositions

We present a systematic first-principles study of the spin-orbit torques in the ferromagnetic monolayers Fe$_3$GeTe$_2$ (FGT) and Fe$_3$GaTe$_2$ (FGaT). Despite sharing the same crystal structure (point group $D_{3h}$) and predominantly Fe~$3d$ spin-polarized bands, the two materials exhibit markedly different current-induced torques. We reveal these differences by computing the full angular dependence of the torkance---the torque per unit applied electric field---using linear-response theory with symmetry-adapted spin--orbit-coupled Wannier functions. FGaT may be viewed as a hole-doped analogue of FGT, since Ga contributes one valence electron fewer than Ge. Although the work functions differ by only about $28$~meV, the band filling near $K$ and $K'$ changes substantially: the density of states at $\varepsilon_F$ is reduced by a factor of three and its spin polarization reverses from majority in FGT to minority in FGaT. These electronic changes are reflected in the torques resolved by time-reversal parity, sublattice, and momentum. In particular, we identify pronounced hidden torques in FGaT and relate the suppression of its fourth-harmonic Fermi-sea component to the evolution of momentum-space pockets. Finally, we discuss the emergence of such self-torques, which are not captured by the conventional picture of current-induced spin accumulation, within a symmetry-based phenomenological framework. Our results provide microscopic insight into current-induced torques in two-dimensional ferromagnets and offer guidance for defect and van der Waals engineering of layered magnetic materials.

cond-mat.mtrl-sci↗

arXiv2026

Resolving High-Energy States of Interlayer Excitons in MoSe$_2$/WSe$_2$ Heterostructures

High-energy states of interlayer excitons (IXs) in van der Waals heterostructures remain largely unexplored despite their importance for understanding many-body interactions and nonlinear optical phenomena. Here, we use photoluminescence excitation (PLE) spectroscopy to resolve a Rydberg-like series of excited IX states in MoSe$_2$/WSe$_2$ heterostructures. We observe multiple PLE resonances below the intralayer exciton energies, which we assign to the 2s-, 3s-, and 4s-like states of the IXs. These resonances are consistently observed across heterostructures with different twist angles, indicating that the high-energy state spectrum is only weakly affected by the twist angle. Wannier-exciton calculations incorporating screened Coulomb interactions reproduce the overall energy scale and qualitative trends of the measured Rydberg-like series, supporting the assignment of the observed resonances. Our findings demonstrate that PLE provides direct experimental access to the previously unexplored high-energy IX states in van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2026

Multistate Manipulation of Charge-Spin Conversion in Two-Dimensional Ferroelectric Bilayers

Achieving nonvolatile and multistate manipulation of charge-spin conversion, including the Edelstein effect (EE) and spin Hall effect (SHE), is crucial for high-density spintronic memory. Here, we propose a mechanism to simultaneously control both EE and SHE in two-dimensional ferroelectric bilayers, where interlayer-parallel and interlayer-antiparallel polarization configurations can coexist. Symmetry analysis shows that in the interlayer-parallel states, reversal of the total polarization switches the sign of the EE, whereas changing to an interlayer-antiparallel configuration suppresses the EE to zero, enabling electrically switchable current-induced spin accumulation among three distinct states, which could be used for ternary logic operations. Meanwhile, the magnitude of the SHE can be tuned by switching between two different classes of polarization configurations, namely interlayer-parallel and interlayer-antiparallel configurations. Using first-principles calculations, we demonstrate this mechanism in bilayer metallic ferroelectric PtBi2, where both interlayer-parallel and interlayer-antiparallel polarization configurations are energetically stable. The EE coefficient in interlayer-parallel states, which can be reversed by polarization switching, arises from competing electron- and hole-pocket contributions near the Fermi surface. The intrinsic SHE coefficients originate from spin Berry curvature that can be reshaped by polarization configuration variation and Fermi-level tuning. Our results establish ferroelectric bilayers as an all-in-one platform for electrically programmable charge-spin conversion.

cond-mat.mtrl-sci↗

arXiv2026

Magnetization-dependent and stacking-tunable Edelstein effect in two-dimensional magnet 2H-VTe2

The Edelstein effect in magnetic systems enables magnetization switching via the coupling between current-induced spin accumulation and intrinsic magnetic order, and is therefore highly promising for next-generation spintronic devices. Realizing and manipulating the Edelstein effect in two-dimensional (2D) magnetic systems is particularly desirable for achieving high-efficiency and multifunctional spintronic applications. In this work, based on first-principles calculations and symmetry analysis, we demonstrate that the Edelstein effect can intrinsically arise in the 2D in-plane ferromagnetic semiconductor 2H-VTe2, with its behavior strongly dependent on the magnetization orientation. For monolayer 2H-VTe2 with D3h crystal symmetry, under an applied current along the +x direction, only the time-reversal-even z component and the time-reversal-odd y(x) component of the spin accumulation are allowed when the magnetization is aligned along +x (+y). For ferromagnetic bilayer 2H-VTe2 in AB or BA stacking, where the crystal symmetry is reduced to C3v, additional spin components emerge with the presence of in-plane magnetization. Specifically, for magnetization along +x (+y), besides dSz_even and dSy_odd (dSz_even and dSx_odd), extra components such as dSy_even and dSz_odd (dSy_even) become allowed. Notably, these additional components can be reversibly switched by changing the stacking configuration from AB to BA via interlayer sliding. Our results not only deepen the understanding of current-induced spin accumulation in 2D magnetic systems from both symmetry and first-principles perspectives, but also identify 2H-MX2 materials as a promising platform for realizing intrinsic and tunable Edelstein effects in high-efficiency spin-orbit torque devices.

cond-mat.mes-hall↗

arXiv2026

Tunable Edelstein effect in intrinsic two-dimensional ferroelectric metal PtBi$_{2}$

The Edelstein effect, which enables charge-to-spin conversion and is therefore highly promising for future spintronic devices, can be realized and non-volatilely manipulated in ferroelectric materials owing to their broken inversion symmetry and switchable polarization states. To date, most ferroelectric systems reported to exhibit the Edelstein effect are semiconductors, requiring extrinsic doping for functionality. In contrast, the Edelstein effect has rarely been reported in metallic ferroelectric systems, where doping is unnecessary. Using first-principles calculations, we predict that a pronounced Edelstein effect can be realized in the recently proposed intrinsic two-dimensional ferroelectric metal PtBi$_{2}$ monolayer, where the sign of the Edelstein coefficient is coupled to the direction of ferroelectric polarization through the polarization-switching-induced reversal of spin textures, thereby enabling non-volatile control of charge-spin conversion. The Edelstein effect reaches a magnitude of $10^{11}~\hbar/(\textup{A} \cdot \textup{cm})$, which is sizable compared to previously reported ferroelectric systems. Microscopically, the Edelstein effect in a PtBi$_2$ monolayer originates from competing contributions of inner Rashba-like electron pockets and outer hole pockets with opposite signs; an upward shift of the Fermi level alters their balance and can reverse the sign of the Edelstein effect. Upon applying biaxial strain, the Fermi-surface electronic structure is strongly modified, resulting in a pronounced change of the Edelstein effect: a 2 \% compressive strain suppresses the Edelstein effect by about 50 \%. Our results not only identify a promising material platform for tunable charge-spin conversion but also provide new insights into the functional potential of metallic ferroelectric systems.

cond-mat.mtrl-sci↗

arXiv2026

Resonant magnetic proximity hot spots in Co/hBN/graphene

Magnetic proximity effects in Co/hBN/graphene heterostructures are systematically analyzed via first-principles calculations, demonstrating a pronounced localized spatial variation of the induced spin polarization of graphene's Dirac states. The proximity-induced exchange coupling, magnetic moments, and tunneling spin polarization (TSP) are shown to depend sensitively on the atomic registry at the interfaces. We analyze more than twenty distinct stackings, including high- and low-symmetry configurations, and reveal that the spin splittings of graphene's Dirac bands span a wide range from 1 to 100 meV, depending on the local hybridization of Co $d_{z^2}$, hBN $p_z$, and graphene $p_z$ orbitals. The strongest proximity effects emerge at geometric resonances, or "proximity hot spots", where the three orbital states overlap maximally. The local spin polarization also depends sensitively on energy: Dirac states aligned with resonant Co orbitals experience the most pronounced exchange interaction. At these energies, the pseudospin Hamiltonian description of magnetic proximity effects breaks down. Outside these resonances, the pseudospin picture is restored. Our findings highlight the intrinsically local nature of proximity effects, governed by the spectral resonance and interlayer wavefunction overlap. We further quantify how additional hBN layers, interlayer twist, and multilayer graphene modify the proximity exchange and TSP, offering microscopic insight for designing spintronic van der Waals heterostructures with engineered interfaces and optimized spin transport.

cond-mat.mes-hall↗

arXiv2026

Electric-current control of anomalous Hall effect

We demonstrate robust and reversible electric-current control of the anomalous Hall effect (AHE) in a two-dimensional WTe2/Fe3GeTe2 (FGT) stack. Applying a current through Td-WTe2 leads to a giant modulation of the AHE of the adjacent FGT layer, with the relative change of the AHE conductivity exceeding 180%. Control experiments show that i) the observed effect is absent in pure FGT, ii) the modulation weakens in thicker FGT films, confirming its interfacial origin, and iii) the modulation peaks for bilayer WTe2, indicating that the Berry-curvature dipole (BCD) plays the dominant role in the modulation. We propose that the charge current I generates an out-of-plane magnetization Mz via BCD in WTe2 and Mz modifies the exchange splitting of FGT via the inverse magnetic proximity effect, thereby altering its Berry curvature and nontrivially influencing the AHE. The demonstrated method of AHE control offers new possibilities for magnetism control, i.e., for the study of AHE-transistors as well as electric-current control of quantum magnets, especially magnetic insulators.

cond-mat.mes-hall↗

arXiv2025

Radial Rashba spin-orbit fields in commensurate twisted transition-metal dichalcogenide bilayers

In commensurate twisted homobilayers, purely radial Rashba spin-orbit fields can emerge. We employ first-principles calculations to investigate the band structures and the spin-orbit fields close to the high-symmetry points $K$ and $\Gamma$ of several commensurate twisted transition-metal dichalcogenide homobilayers: WSe$_2$, NbSe$_2$, and WTe$_2$. The observed in-plane spin textures are mostly radial, and the main features are successfully reproduced using a model Hamiltonian based on two effective mass models including spin-orbit coupling, and a general (spin-conserving) interlayer coupling. Extracting the model Hamiltonian parameters through fitting of several twisted supercells, we find a twist angle dependency of the magnitude of the radial Rashba field, which is symmetric not only around the untwisted cases ($\Theta=0^\circ$ and $\Theta=60^\circ$), but also around $\Theta=30^\circ$. Furthermore, we observe that the interlayer coupling between the $K/K'$-points of the two layers decreases with the increase of the size of the commensurate supercells. Hence, peaks of high interlayer coupling can occur only for twist angles, where small commensurate supercells are possible. Exploring different lateral displacements between the layers, we confirm that the relevant symmetry protecting the radial Rashba is an in-plane 180$^\circ$ rotation axis. We additionally investigate the effects of atomic relaxation and modulation of the interlayer distance. Our calculations on WTe$_2$ bilayers show that their lack of $C_3$ symmetry results in spin textures that are neither radial nor tangential. Our results offer fundamental microscopic insights that are particularly relevant to engineering spin-charge conversion schemes based on twisted layered materials.

cond-mat.mes-hall↗

arXiv2025

Machine Learning Prediction of Magnetic Proximity Effect in van der Waals Heterostructures: From Atoms to Moir\'e

We introduce a machine learning framework that efficiently predicts large-scale proximity-induced magnetism in van der Waals heterostructures, overcoming the high computational cost of density functional theory (DFT). We apply it to graphene/\CGT, which exhibits a previously unrecognized dichotomy. Unlike the spin polarization at the Fermi level, which follows the pseudospin, the proximity-induced magnetic moments vary across carbon atoms, defying analytical modeling. To address this, we develop an ensemble-based regression model trained on DFT data and employ local environment descriptors to map the local ($\sim 2$\,nm$^2$) atomic-scale geometry to the carbon magnetic moments. Besides demonstrating locality, the model reveals rich magnetic moir\'e textures. Crucially, this method can be broadly applied to orbital and spin proximity effects that are highly sensitive to local atomic environments and are beyond analytical description.

cond-mat.mtrl-sci↗

arXiv2025

Generalized many-body exciton g-factors: magnetic hybridization and non-monotonic Rydberg series in monolayer WSe$_2$

Magneto-optics of low dimensional semiconductors, such as monolayer transition metal dichalcogenides, offers a vast playground for exploring complex quantum phenomena. However, current ab initio approaches fail to capture important experimental observations related to brightening of excitonic levels and their g-factor dependence. Here, we develop a robust and general first principles framework for many-body exciton g-factors by incorporating off-diagonal terms for the spin and orbital angular momenta of single-particle bands and many-body states for magnetic fields pointing in arbitrary spatial directions. We implement our framework using many-body perturbation theory via the GW-Bethe-Salpeter equation (BSE) and supplement our analysis with robust symmetry-based models, establishing a fruitful synergy between many-body GW-BSE and group theory. Focusing on the archetypal monolayer WSe$_2$, we accurately reproduce the known results of the low-energy excitons including the Zeeman splitting and the dark/grey exciton brightening. Furthermore, our theory naturally reveals fundamental physical mechanisms of magnetic-field hybridization of higher-energy excitons (s- and p-like) and resolves the long-standing puzzle of the experimentally measured non-monotonic Rydberg series (1s-4s) of exciton g-factors. Our framework offers a comprehensive approach to investigate, rationalize, and predict the non-trivial interplay between magnetic fields, angular momenta, and many-body exciton physics in van der Waals systems.

cond-mat.mes-hall↗

arXiv2025

Spin injection and detection in all-van der Waals 2D devices

In this work we report efficient out-of-plane spin injection and detection in an all-van der Waals based heterostructure using only exfoliated 2D materials. We demonstrate spin injection by measuring spin-valve and Hanle signals in non-local transport in a stack of Fe$_3$GeTe$_2$ (FGT), hexagonal boron nitride (hBN) and graphene layers. FGT flakes form the spin aligning electrodes necessary to inject and detect spins in the graphene channel. The hBN tunnel barrier provides a high-quality interface between the ferromagnetic electrodes and graphene, eliminating the conductivity mismatch problem, thus ensuring efficient spin injection and detection with spin injection efficiencies of up to $P=40$\%. Our results demonstrate that FGT/hBN/graphene heterostructures form a promising platform for realizing 2D van der Waals spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Transport Signatures of Radial Rashba Spin-Orbit Coupling at Ferromagnet/Superconductor Interfaces

Spin-orbit coupling (SOC) emerging at the interfaces of superconducting magnetic tunnel junctions is at the heart of multiple unprecedented physical phenomena, covering triplet proximity effects induced by unconventional (spin-flip) Andreev reflections, giant transport magnetoanisotropies, sizable tunneling anomalous Hall effects, and electrically controlled current-reversing $ 0 $--$ \pi $(-like) transitions in Josephson contacts. Recent first-principles calculations proposed that the Rashba spin-orbit fields in twisted graphene/transition-metal dichalcogenide and van der Waals multilayers can -- owing to broken mirror symmetries -- exhibit an unconventional radial component (with spin parallel to the electron's momentum), which can be quantified by the Rashba angle $ \theta_\mathrm{R} $. We theoretically explore the ramifications of radial Rashba SOC at the interfaces of vertical ferromagnet/superconductor tunnel junctions with a focus on the magnetoanisotropies of the tunneling and tunneling-anomalous-Hall-effect conductances. Our results demonstrate that $ \theta_\mathrm{R} $ can be experimentally extracted from respective magnetization-angle shifts, providing a robust way to probe the radial Rashba SOC induced by twisted multilayers that are placed as tunneling barriers between ferromagnetic and superconducting electrodes.

cond-mat.supr-con↗

arXiv2024

Unconventional Josephson supercurrent diode effect induced by chiral spin-orbit coupling

Chiral materials lacking mirror symmetry can exhibit unconventional spin-orbit fields, including fully momentum-aligned radial Rashba fields as seen in twisted van der Waals homobilayers. We theoretically study Cooper-pair transfer in superconductor/ferromagnet/superconductor Josephson junctions with crossed (tangential and radial) interfacial Rashba fields. We find that their interplay leads to what we call the unconventional supercurrent diode effect (SDE), where supercurrent rectification occurs even with collinear (with respect to the current) barrier magnetization, not possible for conventional spin-orbit fields. This SDE, distinct from conventional Rashba-induced effects on Cooper-pair momenta, arises from the spin precession in the magnetic barrier. We propose it as a sensitive probe of chiral spin textures.

cond-mat.supr-con↗

arXiv2024

Excitonic signatures of ferroelectric order in parallel-stacked MoS$_2$

Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenides, there is little knowledge about the influence of ferroelectric order on their intrinsic valley and excitonic properties. Here, we report direct probing of ferroelectricity in few-layer 3R-MoS$_2$ using reflectance contrast spectroscopy. Contrary to a simple electrostatic perception, layer-hybridized excitons with out-of-plane electric dipole moment remain decoupled from ferroelectric ordering, while intralayer excitons with in-plane dipole orientation are sensitive to it. Ab initio calculations identify stacking-specific interlayer hybridization leading to this asymmetric response. Exploiting this sensitivity, we demonstrate optical readout and control of multi-state polarization with hysteretic switching in a field-effect device. Time-resolved Kerr ellipticity reveals a direct correspondence between spin-valley dynamics and stacking order.

cond-mat.mtrl-sci↗

arXiv2024

Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission

We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isolated MoSe$_2$ monolayer. Under circularly polarized excitation, we find that the exciton-trion emission ratio depends on the relative orientation of excitation helicity and Cr$_2$Ge$_2$Te$_6$ magnetization, even though the photoluminescence emission itself is unpolarized. This observation hints at an ultrafast, spin-dependent interlayer charge transfer that competes with exciton and trion formation and recombination.

cond-mat.mes-hall↗

arXiv2024

Electrical manipulation of intervalley trions in twisted MoSe$_2$ homobilayers at room temperature

The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe$_2$ homobilayer devices at room temperature. Gate-dependent micro-photoluminescence spectroscopy reveals an energy tunability of several meVs originating from the emission of excitonic complexes. Furthermore, our study investigates the twist-angle dependence of valley properties by fabricating devices with stacking angles of $\theta\sim1\degree$, $\theta\sim4\degree$ and $\theta\sim18\degree$. Strengthened by density functional theory calculations, the results suggest that, depending on the twist angle, the conduction band minima and hybridized states at the \textbf{Q}-point promote the formation of intervalley hybrid trions involving the \textbf{Q}-and \textbf{K}-points in the conduction band and the \textbf{K}-point in the valence band. By revealing the gate control of exciton species in twisted homobilayers, our findings open new avenues for engineering multifunctional optoelectronic devices based on ultrathin semiconducting systems.

cond-mat.mtrl-sci↗

arXiv2024

Layer-selective spin-orbit coupling and strong correlation in bilayer graphene

Spin-orbit coupling (SOC) and electron-electron interaction can mutually influence each other and give rise to a plethora of intriguing phenomena in condensed matter systems. In pristine bilayer graphene, which has weak SOC, intrinsic Lifshitz transitions and concomitant van-Hove singularities lead to the emergence of many-body correlated phases. Layer-selective SOC can be proximity induced by adding a layer of tungsten diselenide (WSe2) on its one side. By applying an electric displacement field, the system can be tuned across a spectrum wherein electronic correlation, SOC, or a combination of both dominates. Our investigations reveal an intricate phase diagram of proximity-induced SOC-selective bilayer graphene. Not only does this phase diagram include those correlated phases reminiscent of SOC-free doped bilayer graphene, but it also hosts unique SOC-induced states allowing a compelling measurement of valley g-factor and a seemingly impossible correlated insulator at charge neutrality, thereby showcasing the remarkable tunability of the interplay between interaction and SOC in WSe2 enriched bilayer graphene.

cond-mat.mes-hall↗