Results of a Si/CdTe Compton Telescope

Kousuke Oonuki; Takaaki Tanaka; Shin Watanabe; Shin'ichiro Takeda; Kazuhiro Nakazawa; Takefumi Mitani; Tadayuki Takahashi; Hiroyasu Tajima; Yasushi Fukazawa; Masaharu Nomachi

doi:10.1117/12.621809

arXiv · astro-ph/0509486

Results of a Si/CdTe Compton Telescope

Kousuke Oonuki·Takaaki Tanaka·Shin Watanabe·Shin'ichiro Takeda·Kazuhiro Nakazawa·Takefumi Mitani·Tadayuki Takahashi·Hiroyasu Tajima·Yasushi Fukazawa·Masaharu Nomachi

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Abstract

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).

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Kousuke Oonuki, Takaaki Tanaka, Shin Watanabe, Shin'ichiro Takeda, Kazuhiro Nakazawa, Takefumi Mitani, Tadayuki Takahashi, Hiroyasu Tajima, Yasushi Fukazawa, Masaharu Nomachi. 2005-09-21. Results of a Si/CdTe Compton Telescope. https://doi.org/10.1117/12.621809

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