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arXiv · 2608.13093

Giant exciton effects and magneto-excitonic coupling in V4S9X4 2D magnetic semiconductors

Abstract

Room-temperature spin-optoelectronic devices require a combination of robust ferromagnetism and giant exciton binding, a pairing mutually exclusive in conventional semiconductors due to magnetic localization that screens excitons. Cluster-assembled V4S9X4 (X = F, Cl, Br and I) monolayers overcome this bottleneck via a hierarchical design, that is, intra-cluster localized states host both local magnetic moments and strong electron-hole interactions, while inter-cluster coupling mediates long-range ferromagnetism. Remarkably, these two-dimensional semiconductors exhibit intrinsic ferromagnetism with Curie temperature up to 507.6 K. As a prototype, V4S9Br4 monolayer possesses a giant exciton binding energy of 1.85 eV. Its lowest exciton is a dark state (DI) with a radiative lifetime of 1.20 ns, whereas the first bright exciton (BI) exhibits an ultrafast radiative decay of 86.87 ps. This stark lifetime contrast enables simultaneous ultrafast optical response and long-lived spin information storage. Most notably, switching between ferromagnetic and antiferromagnetic order allows for wide-range tuning of exciton lifetime, with the giant binding energy remaining nearly intact. Our findings establish cluster assembly as a powerful paradigm for designing next-generation spin-photonic and quantum information devices operating at room temperature.

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Yingjie Wei, Fan Zhang, Ying Zhao, Lixin Zhou, Yan Su, Yu Guo, Jijun Zhao. 2026-08-13. Giant exciton effects and magneto-excitonic coupling in V4S9X4 2D magnetic semiconductors. https://arxiv.org/abs/2608.13093

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