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arXiv · 2608.09508

200 mm Wafer-Scale Monolithic 3D Integration of Atomic Layer-Deposited Oxide Semiconductors

Chang Niu·Linjia Long·Luqi Zheng·Shuting Du·Jian-Yu Lin·Kisoo Nam·Zehao Lin·Chang Liu·Juanjuan Lu·Haiyan Wang·Haitong Li·Peide D. Ye
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Abstract

Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor (CMOS) technology by extending dense vertical stacking of multifunctional logic and memory devices. Here, we demonstrate wafer-scale M3D integration of three tiers of atomic-layer-deposited (ALD) indium oxide (InOx)-based devices (>100,000 fabricated), including ferroelectric, enhancement-mode, and depletion-mode field-effect transistors, on 200 mm silicon wafers. We achieve threshold voltage standard deviation as low as 0.04 V, average electron mobility up to 91.6 cm2V-1s-1, and fully functional cross-tier circuits. A four-tier 3D computing-in-memory (CIM) accelerator targeting large language model workloads is developed using a custom InOx process design kit, delivering 1.4x to 2.9x speedup and comparable energy-delay product improvements over 2D baselines. These results establish ALD InOx M3D integration as a scalable and CMOS-compatible platform for next-generation artificial intelligence hardware and advanced electronics.

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Chang Niu, Linjia Long, Luqi Zheng, Shuting Du, Jian-Yu Lin, Kisoo Nam, Zehao Lin, Chang Liu, Juanjuan Lu, Haiyan Wang, Haitong Li, Peide D. Ye. 2026-08-10. 200 mm Wafer-Scale Monolithic 3D Integration of Atomic Layer-Deposited Oxide Semiconductors. https://arxiv.org/abs/2608.09508

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