Symmetry-Selective Strain Control of Anisotropic Magnetic Response in a Silicon FinFET Double Quantum Dot

Abstract

Strain naturally develops in three-dimensional quantum-dot structures such as silicon FinFETs during fabrication and cooling. Such strain becomes especially important in a double quantum dot, because the two dots can experience different local strain and therefore acquire different magnetic responses. To understand how this dot-to-dot strain difference affects coupled hole spins, we theoretically study the local \(g\) tensors of a silicon FinFET double quantum dot by combining a three-dimensional Poisson--Schr\"odinger calculation based on a six-band \(k\!\cdot\!p\) model with configuration interaction. We find that the effect of strain depends on both its tensor component and its spatial symmetry. For the diagonal components \(\epsilon_{yy}\) and \(\epsilon_{zz}\), strain mainly changes the principal \(g\) values, with only a small opening of the maximum-response axes. In contrast, the shear component \(\epsilon_{yz}\) can also change the orientation of the local magnetic response. When the strain profile preserves the transverse mirror symmetry, the shear-induced rotation is strongly suppressed. Breaking this local constraint permits a pronounced off-diagonal response and rotates the principal magnetic axes. The same component- and symmetry-selected trends appear in a Zeeman-only calculation, showing that the valence-band Zeeman coupling is sufficient to generate them, while the full Hamiltonian determines their quantitative expression. Together, these results show how the tensor component and spatial symmetry of strain can be used to control both the magnitude and orientation of the magnetic response in coupled hole-spin qubits.