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arXiv · 2507.00599

Ab-initio-NEGF Fundamental Roadmap for Carbon-Nanotube and Two-Dimensional-Material MOSFETs at the Scaling and VDD Limit

Aryan Afzalian
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Abstract

Using accurate Hybrid-Functional DFT coupled with the Non-Equilibrium Green's function (NEGF) formalism, we explore and benchmark the fundamental scaling limits of CNT-FETs against Si and 2D-material MoS$_2$ and HfS$_2$ Nanosheets, highlighting their potential for gate length (L) and supply voltage (VDD) scaling down to 5 nm and to 0.5 V, respectively. The highest drive current is achieved by CNT-FETs with sub 1.3 nm diameters down to $L = 9$ nm and using VDD in the 0.45-0.5V range. Below $L = 9$ nm, however, the HfS$_2$ NS offers the best drive and could further scale down to $L = 5$ nm with a reduced VDD of 0.5 V.

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Aryan Afzalian. 2025-07-01. Ab-initio-NEGF Fundamental Roadmap for Carbon-Nanotube and Two-Dimensional-Material MOSFETs at the Scaling and VDD Limit. https://arxiv.org/abs/2507.00599

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