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arXiv · 2505.02285

Content Addressable Memory Design with Reference Resistor for Improved Search Resolution

Siri Narla·Steven J. Koester·Rebecca A. Dawley·Ageeth A. Bol·Piyush Kumar·Azad Naeemi
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Abstract

Despite the parallel in-memory search capabilities of content addressable memories (CAMs), their use in applications is constrained by their limited resolution that worsens as they are scaled to larger arrays or advanced nodes. In this work we present experimental results for a novel back-end-of-line compatible reference resistive device that can significantly improve the search resolution of CAMs implemented with CMOS and beyond-CMOS technologies to less than or equal to 5-bits.

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Siri Narla, Steven J. Koester, Rebecca A. Dawley, Ageeth A. Bol, Piyush Kumar, Azad Naeemi. 2025-05-04. Content Addressable Memory Design with Reference Resistor for Improved Search Resolution. https://arxiv.org/abs/2505.02285

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