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arXiv · 2503.14805

Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 {\deg}C

Hunter Ellis·Wei Jia·Imteaz Rahaman·Apostoli Hillas·Botong Li·Michael A. Scarpulla·Berardi Sensale Rodriguez·Kai Fu
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Abstract

Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation were analyzed via I-V and C-V measurements from 25 {\deg}C to 500 {\deg}C, revealing temperature-dependent transport, interface stability, and device stability. Upon returning to room temperature, the diodes exhibited nearly unchanged forward characteristics, while the breakdown voltage declined significantly from 2.4 kV to 700 V. This behavior indicates a temperature-induced reduction in the barrier height. Detailed analysis revealed that variable range hopping (VRH) dominated the leakage mechanism at moderate temperatures, while thermal emission (TE) became increasingly significant at temperatures exceeding 400 {\deg}C.

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Hunter Ellis, Wei Jia, Imteaz Rahaman, Apostoli Hillas, Botong Li, Michael A. Scarpulla, Berardi Sensale Rodriguez, Kai Fu. 2025-03-19. Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 {\deg}C. https://arxiv.org/abs/2503.14805

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