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arXiv · 2412.07035

Temperature-induced hysteretic behavior of resistivity and magnetoresistance of electrodeposited bismuth films for X- ray transition-edge sensor absorbers

Orlando Quaranta·Nunzia Coppola·Lisa Gades·Alice Galdi·Tejas Guruswamy·Alessandro Mauro·Luigi Maritato·Antonino Miceli·Sergio Pagano·Carlo Barone
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Abstract

This study investigates the temperature-induced hysteretic behavior of resistivity and magnetoresistance in electrodeposited bismuth films, with a focus on their application as absorbers in transition-edge sensors (TESs) for X-ray detection. Through a series of resistance versus temperature measurements from room temperature to a few Kelvins, we explore the change in the conductive behavior of bismuth electrodeposited on various substrates at the various temperatures. Our findings show for the first time both hysteretic and irreversible changes in resistivity as a function of temperature. Further, magnetoresistance measurements reveal notable variations in resistance behavior under different magnetic fields, highlighting the impact of magnetic fields on these films' electronic transport properties, with an indication of potential weak anti-localization effects at the lowest temperatures. This study not only provides a deeper understanding of bismuth's conductivity characteristics at low temperatures but also sheds light on the practical implications for developing more effective TESs for synchrotron X-ray facilities.

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Orlando Quaranta, Nunzia Coppola, Lisa Gades, Alice Galdi, Tejas Guruswamy, Alessandro Mauro, Luigi Maritato, Antonino Miceli, Sergio Pagano, Carlo Barone. 2024-12-09. Temperature-induced hysteretic behavior of resistivity and magnetoresistance of electrodeposited bismuth films for X- ray transition-edge sensor absorbers. https://arxiv.org/abs/2412.07035

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