arXiv · 2411.04830
Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2
Abstract
Van der Waals (vdW) materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic "flash memory" required for the classical control electronics for solid-state quantum information processing. In 1T-TaS2, a non-volatile metallic 'hidden' state can be induced from an insulating equilibrium charge-density wave ground state using either optical or electrical pulses. Given that conventional memristors form localized, filamentary channels which support the current, a key question for design concerns the geometry of the conduction region in highly energy-efficient 1T-TaS2 devices. Here, we report in operando micro-beam X-ray diffraction, fluorescence, and concurrent transport measurements, allowing us to spatially image the non-thermal hidden state induced by electrical switching of 1T-TaS2. Our results reveal a long-range ordered, non-filamentary switched state that extends well below the electrodes, implying that the self-organized, collective growth of the hidden phase is driven by a combination of charge flow and lattice strain. Our unique combination of techniques showcases the potential of non-destructive, three-dimensional X-ray imaging to study bulk switching properties in microscopic detail, namely electrical control of the vdW layer stacking.
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Corinna Burri, Nelson Hua, Dario Ferreira Sanchez, Wenxiang Hu, Henry G. Bell, Rok Venturini, Shih-Wen Huang, Aidan G. McConnell, Faris Dizdarevic, Anze Mraz, Damjan Svetin, Benjamin Lipovsek, Marko Topic, Dimitrios Kazazis, Gabriel Aeppli, Daniel Grolimund, Yasin Ekinci, Dragan Mihailovic, Simon Gerber. 2024-11-07. Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2. https://doi.org/10.1038/s41467-025-65212-1
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