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arXiv · 2409.00200

Measurements of dislocations in 4H-SiC with rocking curve imaging

Ahmar Khaliq·Felix Wittwer·Niklas Pyrlik·Giovanni Fevola·Svenja Patjens·Jackson Barp·Gero Falkenberg·Sven Hampel·Michael Stuckelberger·Jan Garrevoet·Dennis Bruckner·Peter Modregger
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Abstract

4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.

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Ahmar Khaliq, Felix Wittwer, Niklas Pyrlik, Giovanni Fevola, Svenja Patjens, Jackson Barp, Gero Falkenberg, Sven Hampel, Michael Stuckelberger, Jan Garrevoet, Dennis Bruckner, Peter Modregger. 2024-08-30. Measurements of dislocations in 4H-SiC with rocking curve imaging. https://arxiv.org/abs/2409.00200

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