arXiv Science⌕ Search
Home/Archive/arXiv

arXiv · 2408.12181

Machine learning-based determination of magnetic parameters from magnetic images with different imaging scales

Akito Watanabe·Yoshinobu Nakatani·Hiroyuki Awano·Kenji Tanabe
View original source ↗Read source document ↗Export metadata ↓

Abstract

The determination of material parameters is significantly important in material science, which is often a challenging task. Recently, advancements have shown that magnetic parameters, such as the Dzyaloshinskii-Moriya interaction (DMI), can be estimated from a magnetic domain image using machine learning (ML). This development suggests a potential shift in how magnetic parameters are determined, moving away from traditional measurement techniques to more innovative methods involving image-based inputs processed by ML. In previous studies, the test images used for estimation always matched the training images in size. However, since image size is contingent on the microscopy technique used, the ability to accurately estimate parameters from images of varying sizes is essential. Here, we investigated the feasibility of estimating the DMI constant and saturation magnetization from magnetic domain images of different sizes using ML. We successfully demonstrated that it is possible to estimate these parameters even when the imaging sizes differ between training and test datasets. Additionally, our comparison of the estimation accuracy for the DMI constant and saturation magnetization revealed that the tolerance for differences in image size varies depending on the specific parameter being estimated. These findings could have a significant impact on the future methods of determining magnetic parameters.

Explore related subjects

cond-mat.mtrl-scicond-mat.mes-hall

Keep this discovery

BibTeXRIS

Akito Watanabe, Yoshinobu Nakatani, Hiroyuki Awano, Kenji Tanabe. 2024-08-22. Machine learning-based determination of magnetic parameters from magnetic images with different imaging scales. https://arxiv.org/abs/2408.12181

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗