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arXiv · 2405.13415

Fully coupled electron-phonon transport in two-dimensional-material-based devices using efficient FFT-based self-energy calculations

Rutger Duflou·Gautam Gaddemane·Michel Houssa·Aryan Afzalian
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Abstract

Self-heating effects can significantly degrade the performance in nanoscale devices. We investigate self-heating effects in such devices based on two-dimensional materials using ab-initio techniques. A new algorithm was developed to allow for efficient self-energy computations, achieving a $\sim$500 times speedup. It is found that for the simple case of free-standing MoS$_2$ without explicit metal leads, the self-heating effects do not result in significant performance degradation.

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Rutger Duflou, Gautam Gaddemane, Michel Houssa, Aryan Afzalian. 2024-05-22. Fully coupled electron-phonon transport in two-dimensional-material-based devices using efficient FFT-based self-energy calculations. https://doi.org/10.1016/j.cpc.2024.109430

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