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arXiv · 2310.19895

Electrical Tuning of Neutral and Charged Excitons with 1-nm Gate

Jawaher Almutlaq·Jiangtao Wang·Linsen Li·Chao Li·Tong Dang·Vladimir Bulović·Jing Kong·Dirk Englund
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Abstract

Electrical control of individual spins and photons in solids is key for quantum technologies, but scaling down to small, static systems remains challenging. Here, we demonstrate nanoscale electrical tuning of neutral and charged excitons in monolayer WSe2 using 1-nm carbon nanotube gates. Electrostatic simulations reveal a confinement radius below 15 nm, reaching the exciton Bohr radius limit for few-layer dielectric spacing. In situ photoluminescence spectroscopy shows gate-controlled conversion between neutral excitons, negatively charged trions, and biexcitons at 4 K. Important for quantum information processing applications, our measurements indicate gating of a local 2D electron gas in the WSe2 layer, coupled to photons via trion transitions with binding energies exceeding 20 meV. The ability to deterministically tune and address quantum emitters using nanoscale gates provides a pathway towards large-scale quantum optoelectronic circuits and spin-photon interfaces for quantum networking.

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Jawaher Almutlaq, Jiangtao Wang, Linsen Li, Chao Li, Tong Dang, Vladimir Bulović, Jing Kong, Dirk Englund. 2023-10-30. Electrical Tuning of Neutral and Charged Excitons with 1-nm Gate. https://arxiv.org/abs/2310.19895

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