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arXiv · 2310.09029

Pushing the limits of ab-initio-NEGF transport using efficient dissipative Mode-Space algorithms for realistic simulations of low-dimensional semiconductors including their oxide interfaces

Aryan Afzalian·Fabian Ducry
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Abstract

We investigate the trade-offs between accuracy and efficiency for several flavors of the dissipative mode-space NEGF algorithm with the self-consistent Born approximation for DFT Hamiltonians. Using these models, we then demonstrate the dissipative self-consistent DFT-NEGF simulations of realistic 2D-material devices including their oxide interfaces with large slab dimensions (up to 1000 atoms) and up to several 100,000 atoms in the full device, pushing the limit of ab-initio transport.

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Aryan Afzalian, Fabian Ducry. 2023-10-13. Pushing the limits of ab-initio-NEGF transport using efficient dissipative Mode-Space algorithms for realistic simulations of low-dimensional semiconductors including their oxide interfaces. https://arxiv.org/abs/2310.09029

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