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arXiv · 2310.04201

Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters

Jesus Cañas·Névine Rochat·Adeline Grenier·Audrey Jannaud·Zineb Saghi·Jean-Luc Rouviere·Edith Bellet-Amalric·Anjali Harikumar·Catherine Bougerol·Lorenzo Rigutti·Eva Monroy
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Abstract

We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces strong shear strain, which favors the formation of 30{\deg} faceted pits. The cone-like structures present Ga enrichment at the boundary facets and larger QDs within the defect. The bimodality is attributed to the differing dot size/composition within the defects and at the defect boundaries, which is confirmed by the correlation of microscopy results and Schr\"odinger-Poisson calculations.

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Jesus Cañas, Névine Rochat, Adeline Grenier, Audrey Jannaud, Zineb Saghi, Jean-Luc Rouviere, Edith Bellet-Amalric, Anjali Harikumar, Catherine Bougerol, Lorenzo Rigutti, Eva Monroy. 2023-10-06. Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters. https://doi.org/10.1021/acsnano.4c01376

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