A 137.5 TOPS/W SRAM Compute-in-Memory Macro with 9-b Memory Cell-Embedded ADCs and Signal Margin Enhancement Techniques for AI Edge Applications

Xiaomeng Wang; Fengshi Tian; Xizi Chen; Jiakun Zheng; Xuejiao Liu; Fengbin Tu; Jie Yang; Mohamad Sawan; Kwang-Ting Cheng; Chi-Ying Tsui

arXiv · 2307.05944

A 137.5 TOPS/W SRAM Compute-in-Memory Macro with 9-b Memory Cell-Embedded ADCs and Signal Margin Enhancement Techniques for AI Edge Applications

Xiaomeng Wang·Fengshi Tian·Xizi Chen·Jiakun Zheng·Xuejiao Liu·Fengbin Tu·Jie Yang·Mohamad Sawan·Kwang-Ting Cheng·Chi-Ying Tsui

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Abstract

In this paper, we propose a high-precision SRAM-based CIM macro that can perform 4x4-bit MAC operations and yield 9-bit signed output. The inherent discharge branches of SRAM cells are utilized to apply time-modulated MAC and 9-bit ADC readout operations on two bit-line capacitors. The same principle is used for both MAC and A-to-D conversion ensuring high linearity and thus supporting large number of analog MAC accumulations. The memory cell-embedded ADC eliminates the use of separate ADCs and enhances energy and area efficiency. Additionally, two signal margin enhancement techniques, namely the MAC-folding and boosted-clipping schemes, are proposed to further improve the CIM computation accuracy.

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BibTeX RIS

Xiaomeng Wang, Fengshi Tian, Xizi Chen, Jiakun Zheng, Xuejiao Liu, Fengbin Tu, Jie Yang, Mohamad Sawan, Kwang-Ting Cheng, Chi-Ying Tsui. 2023-07-12. A 137.5 TOPS/W SRAM Compute-in-Memory Macro with 9-b Memory Cell-Embedded ADCs and Signal Margin Enhancement Techniques for AI Edge Applications. https://arxiv.org/abs/2307.05944

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