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arXiv · 2203.16184

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

Sergi Cuesta·Lou Denaix·Florian Castioni·Le Si Dang·Eva Monroy
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Abstract

We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallographic planes of the AlGaN structure, allows the fabrication of flat and parallel facets without a degradation of the multilayered ensemble. The optical performance of the lasers display a major improved when using the two-step process for the definition of the cavity, in comparison to cavities fabricated by mechanical cleaving, with the lasing threshold under optical pumping being reduced to almost half.

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Sergi Cuesta, Lou Denaix, Florian Castioni, Le Si Dang, Eva Monroy. 2022-03-30. Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets. https://doi.org/10.1088/1361-6641/ac7164

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