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arXiv · 2012.03180

One-dimensional van der Waals heterojunction diode

Ya Feng·Henan Li·Taiki Inoue·Shohei Chiashi·Slava V. Rotkin·Rong Xiang·Shigeo Maruyama
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Abstract

The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and further miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes, while n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.

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Ya Feng, Henan Li, Taiki Inoue, Shohei Chiashi, Slava V. Rotkin, Rong Xiang, Shigeo Maruyama. 2020-12-06. One-dimensional van der Waals heterojunction diode. https://doi.org/10.1021/acsnano.1c00657

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