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arXiv · 2009.03109

Atomic Precision Processing of New Materials for Frontier Microelectronic Applications in High Performance Computing and Artificial Intelligence

Yevgeny Raitses·Sebastian Engelmann·Shahid Rauf·Igor Kaganovich·Jonathan Menard·Steven Cowely
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Abstract

This document is a joint response by scientists from the Princeton Plasma Physics Laboratory, IBM T. J. Watson Research Center and Applied Materials, Inc. to the DOE Office of Science (DOE-SC) Request for Information: Basic Research Initiative for Microelectronics (https://www.federalregister.gov/documents/2019/07/12/2019-14869/request-for-information-basic-research-initiative-for-microelectronics). Specifically, we propose DOE-SC to include the following topics in their consideration for future solicitations on Microelectronics: 1) The development of a real-time monitoring and in-situ diagnostic techniques that can provide information on plasma, substrate surface, and interaction between both during atomic precision processing of complex materials for the most advanced microelectronic devices with applications to high performance computing and artificial intelligence, and 2) The development of experimentally validated modeling tools to predict processing dynamics including plasma, chemical and material processes involved.

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Yevgeny Raitses, Sebastian Engelmann, Shahid Rauf, Igor Kaganovich, Jonathan Menard, Steven Cowely. 2020-09-07. Atomic Precision Processing of New Materials for Frontier Microelectronic Applications in High Performance Computing and Artificial Intelligence. https://arxiv.org/abs/2009.03109

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