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arXiv · 1908.08689

Repairing the Surface of InAs-based Topological Heterostructures

S. J. Pauka·J. D. S. Witt·C. N. Allen·B. Harlech-Jones·A. Jouan·G. C. Gardner·S. Gronin·T. Wang·C. Thomas·M. J. Manfra·D. J. Reilly·M. C. Cassidy
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Abstract

Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or InSb-based materials, the need to form shallow quantum wells to create a hard-gapped $p$-wave superconducting state often subjects them to fabrication-induced damage, limiting their mobility. Here we examine scattering mechanisms in processed InAs 2DEG quantum wells and demonstrate a means of increasing their mobility via repairing the semiconductor-dielectric interface. Passivation of charged impurity states with an argon-hydrogen plasma results in a significant increase in the measured mobility and reduction in its variance relative to untreated samples, up to 45300 cm$^2$/(V s) in a 10 nm deep quantum well.

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S. J. Pauka, J. D. S. Witt, C. N. Allen, B. Harlech-Jones, A. Jouan, G. C. Gardner, S. Gronin, T. Wang, C. Thomas, M. J. Manfra, D. J. Reilly, M. C. Cassidy. 2019-08-23. Repairing the Surface of InAs-based Topological Heterostructures. https://arxiv.org/abs/1908.08689

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