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arXiv · 1905.03119

Development and simulations of Enhanced Lateral Drift Sensors

Anastasiia Velyka·Hendrik Jansen
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Abstract

We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing mechanism, which is achieved by a non-homogeneous electric field in the lateral direction in the sensor bulk. The non-homogeneous electric field is created by buried doping implants with a higher concentration with respect to the background concentration of the bulk. The resulting position-dependent charge sharing allows for an improved interpolation of the impact position. TCAD-based electric field simulations for 2D and 3D geometries as well as transient simulations with a traversing particle for the 2D geometry have been carried out. The electric field profiles have further been optimised for position resolution. The simulations show a strong dependence of the charge sharing mechanism on the buried implant concentration. Optimal values for the buried implant concentration allow for nearly linear charge sharing between two readout electrodes as a function of the impact position. Additionally, the foreseen production technique combining silicon epitaxy and ion beam implantation is outlined.

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Anastasiia Velyka, Hendrik Jansen. 2019-05-08. Development and simulations of Enhanced Lateral Drift Sensors. https://doi.org/10.1088/1748-0221%2F14%2F05%2Fc05005

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