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arXiv · 1809.04012

Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas

Samuel James Bader·Reet Chaudhuri·Kazuki Nomoto·Austin Hickman·Zhen Chen·Han Wui Then·David A. Muller·Huili Grace Xing·Debdeep Jena
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Abstract

High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN wide-bandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for next-generation compact high-power devices.

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Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto, Austin Hickman, Zhen Chen, Han Wui Then, David A. Muller, Huili Grace Xing, Debdeep Jena. 2018-10-18. Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas. https://doi.org/10.1109/led.2018.2874190

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