arXiv · 1802.05107
Engineering Dzyaloshinskii-Moriya interaction in B20 thin film chiral magnets
Abstract
Chiral magnetic Mn$_x$Fe$_{1-x}$Ge compounds have an antisymmetric exchange interaction that is tunable with the manganese stoichiometric fraction, $x$. Although millimeter-scale, polycrystalline bulk samples of this family of compounds have been produced, thin-film versions of these materials will be necessary for devices. In this study, we demonstrate the growth of epitaxial Mn$_x$Fe$_{1-x}$Ge thin films on Si (111) substrates with a pure B20 crystal structure in the stoichiometric fraction range x from 0 to 0.81. Following systematic physical and magnetic characterization including microwave absorption spectroscopy, we quantify the antisymmetric exchange interaction and helical period as a function of $x$, which ranges from 200 nm to 8 nm. Our results demonstrate an approach to engineering the size of magnetic skyrmions in epitaxial films that are grown using scalable techniques.
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Emrah Turgut, Hanjong Paik, Kayla Nguyen, David A. Muller, Darrell G. Schlom, Gregory D. Fuchs. 2018-02-14. Engineering Dzyaloshinskii-Moriya interaction in B20 thin film chiral magnets. https://doi.org/10.1103/physrevmaterials.2.074404
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