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arXiv · 1703.01378

Photon-gated spin transistor

Fan Li·Cheng Song·Bin Cui·Jingjing Peng·Youdi Gu·Guangyue Wang·Feng Pan
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Abstract

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitting diode (LED) light. The manipulation of the channel conductivity is ascribed to the enhanced scattering of the spin-polarized current by photon-excited antiparallel aligned spins. And the photon-gated spin-FET shows strong light power dependence and reproducible enhancement of resistance under light illumination, indicting well-defined conductivity cycling features. Our finding would enrich the concept of spin-FET and promote the use of optical means in spintronics for low power consumption and ultrafast data processing.

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Fan Li, Cheng Song, Bin Cui, Jingjing Peng, Youdi Gu, Guangyue Wang, Feng Pan. 2017-03-04. Photon-gated spin transistor. https://doi.org/10.1002/adma.201604052

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