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arXiv · 1608.06588

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Lingjie Du·Tingxin Li·Wenkai Lou·Xingjun Wu·Xiaoxue Liu·Zhongdong Han·Chi Zhang·Gerard Sullivan·Amal Ikhlassi·Kai Chang·Rui-Rui Du
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Abstract

We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.

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Lingjie Du, Tingxin Li, Wenkai Lou, Xingjun Wu, Xiaoxue Liu, Zhongdong Han, Chi Zhang, Gerard Sullivan, Amal Ikhlassi, Kai Chang, Rui-Rui Du. 2017-06-19. Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators. https://doi.org/10.1103/physrevlett.119.056803

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