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arXiv · 1506.01601

Epitaxial Growth of Two-Dimensional Stanene

Fengfeng Zhu·Wei-jiong Chen·Yong Xu·Chun-lei Gao·Dan-dan Guan·Canhua Liu·Dong Qian·Shou-Cheng Zhang·Jin-feng Jia
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Abstract

Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth1,2. Ge-based germanene was realized by mechanical exfoliation3. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations4, or can support enhanced thermoelectric performance5, topological superconductivity6 and the near-room-temperature quantum anomalous Hall (QAH) effect7. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene.

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Fengfeng Zhu, Wei-jiong Chen, Yong Xu, Chun-lei Gao, Dan-dan Guan, Canhua Liu, Dong Qian, Shou-Cheng Zhang, Jin-feng Jia. 2015-06-04. Epitaxial Growth of Two-Dimensional Stanene. https://doi.org/10.1038/nmat4384

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