arXiv subjects

Dong Qian

Publications and source records attributed to Dong Qian.

At least 19 recordsLinked to original sources

arXiv2026

Emergent magnetism, heavy electrons and pressure-induced reentrant superconductivity in the iron substituted 4d transition-metal sulfides

Superconductivity emerging from or in the vicinity of magnetic states is generally considered to be mediated by spin fluctuations and thus lies beyond the scope of conventional electron-phonon coupled BCS framework. Here we report the emergence of novel ferromagnetism in the d-electron rhodium sulfide Rh17S15 superconductor, characterized by an enhanced Sommerfeld coefficient γ arising from the flat topological band and many-body correlations. We further demonstrate that the ferromagnetism can be tuned via Fe substitution at the Rh sites, leading to a spin glass ground state induced by the competing ferromagnetic and antiferromagnetic exchange interactions. Fe doping results in a further enhancement of both the γ and electron effective masses. At a doping level of x = 0.67 in Rh17-xFexS15, γ reaches 312 mJ mol-1K-2, second only to the well-documented d-electron heavy-fermion material LiV2O4. Furthermore, upon applying pressure, superconductivity is first suppressed; under high pressures, however, we observe the reentrant superconductivity in both pristine and Fe-doped samples. Our results not only demonstrate the unusual magnetic states and possible heavy-fermion features in these frustration-free, d-based superconductors, but also suggest that the superconductivity in this system is likely mediated by the intrinsic spin fluctuations and may thus be unconventional.

cond-mat.supr-con↗

arXiv2026

Observation of Magnetic-Anisotropy Crossover and High-Temperature Skyrmions in the Dirac Magnet Fe3Ge with a Distorted Kagome Lattice

Topological materials that simultaneously host robust high-temperature skyrmions and nontrivial electronic band structures have attracted tremendous interest owing to their distinctive advantages for both fundamental research and prospective technological applications. Here, we report the observation of robust skyrmions in the Dirac kagome magnet Fe3Ge, which exhibits a high Curie temperature of ~ 650 K. At room temperature, Fe3Ge shows a large intrinsic anomalous Hall conductivity of ~ 380 Ω-1cm-1, originating from its nontrivial electronic band topology. Systematic magnetization measurements reveal a spin reorientation transition at ~ 375 K, indicating a crossover from easy-plane to easy-axis magnetic anisotropy. Below the spin reorientation temperature, a large topological Hall effect is observed, arising from microscopic noncoplanar spin structures. Lorentz transmission electron microscopy shows that mesoscopic skyrmions are stabilized in the easy-axis magnetic anisotropy regime and persist over an exceptionally wide temperature window of 375-650 K, far exceeding that of most previously reported skyrmion-hosting materials. These results establish Fe3Ge as a promising platform for exploring diverse topological properties, with strong potential for advancing future high-temperature spintronic applications, ranging from next-generation information storage to logic computing devices.

cond-mat.mtrl-sci↗

arXiv2026

Giant Surface-driven Nonlinear Hall Effect in BiTeCl at Room Temperature

The nonlinear Hall effect (NLHE) provides a pathway to generate a Hall response in time-reversal-symmetric yet inversion-symmetry-broken systems. NLHE can rectify an alternating current into a transverse direct voltage, making it attractive for radio-frequency rectification, energy harvesting, and terahertz detection, applications for which device miniaturization remains a central pursuit. In this context, the inherent inversion symmetry breaking at surfaces is particularly appealing: because symmetry is necessarily broken at the surface of any crystal, irrespective of whether its bulk is centrosymmetric, surface-driven nonlinear responses lift the stringent constraint on bulk symmetry and open a route toward compact device architectures. Here we report the observation of a giant, surface-driven second-order nonlinear Hall effect in the Rashba-type polar semiconductor BiTeCl at room temperature. The determined second-order nonlinear Hall susceptibility at 300 K reaches 1.68 $μ$mV$^{-1}$, which is 80 times larger than that of the best previously reported surface-dominated systems. We attribute this giant response to the synergistic interplay between BiTeCl's polar crystal structure and its rich surface states: the polar stacking renders the top and bottom surfaces inequivalent, so that the nonlinear response originates from a single surface without compensation from the other. Symmetry and scaling analyses suggest that both skew-scattering and side-jump mechanisms contribute to the observed effect. Our findings not only identify BiTeCl as a promising platform for future applications utilizing the NLHE, but also establish the asymmetry between the opposite surfaces of a polar crystal as a general design principle for discovering surface-driven materials with larger nonlinear Hall responses.

cond-mat.mtrl-sci↗

arXiv2026

Evolution of topological phases in atomically thin WTe2 films

Topological materials ranging from topological insulators to semimetals host many novel quantum phenomena including quantum spin Hall effect and topological Fermi arcs. Transitions between these topological phases have attracted much research interest. We performed angle-resolved photoemission spectroscopy (ARPES) on WTe2 ranging from a monolayer to the bulk and reveal the evolution of the electronic structure and the band gap. Notably, the gap observed in the monolayer system is suppressed in the three layers, where the film becomes metallic. Variations in the topological properties with thickness are demonstrated by the first-principles calculations. Topological Z2 invariant is shown to oscillate between 1 and 0 with the addition of layers, originating from the interlayer coupling-induced change in band crossing. The system evolves into a Weyl semimetal when the conduction and valence bands touch near the Fermi level and the topological nature is described by the Chern number. Our findings demonstrate the non-monotonic dependence of topological states on dimensionality and how layer-driven electronic band reconfiguration leads to phase transitions in solids.

cond-mat.mes-hall↗

arXiv2026

Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2

Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. However, limited interlayer coupling strength and the lack of efficient tuning methods hinder further exploration of correlated phenomena in moiré semiconductors. Here we introduce a cryogenic dual-gated diamond-anvil platform using helium as a pressure medium, enabling reversible hydrostatic tuning together with magneto-optical spectroscopy in twisted bilayer WSe2. Pressure enhances the moiré potential, redshifts excitons, and stabilizes Stoner ferromagnetism otherwise absent at a 3.1-degree twist. Simultaneously, the half-filled C = 1 Chern insulating state strengthens, exhibiting a reduced saturation field. Moreover, we observe a topological phase transition from a Chern insulator to a Mott insulator at around 2 GPa. First-principles calculations reveal that a Gamma-to-K valence-band-maximum switching drives this transition by converting an Ising-like topological K-valley miniband into a spin-degenerate trivial Gamma miniband. Our findings demonstrate hydrostatic pressure as a powerful, continuous control axis for correlated magnetism and topological band engineering in moiré materials.

cond-mat.mtrl-sci↗

arXiv2026

Ferroelectricity in Atomically Thin Metallic TaNiTe$_5$ with Ultrahigh Carrier Density

Ferroelectric metals, characterized by the coexistence of ferroelectricity and metallic conductivity, present a fundamental challenge due to the screening effect of free charge carriers on the long-range electric dipole order. Existing strategies to circumvent this obstacle include employing two-dimensional (2D) crystals, where reduced dimensionality and low carrier densities suppress screening, or designing materials of van der Waals (vdW) superlattice with spatially separated and decoupled conductive and nearly insulating ferroelectric layers. Here, we report an alternative paradigm in TaNiTe5, where an ultrahigh carrier density coexists with an out-of-plane ferroelectric order within the same surface monolayer. Using piezoresponse force microscopy (PFM), we observed robust ferroelectric behavior in TaNiTe5 down to single-unit-cell thickness (~1.3 nm) at room temperature. Scanning transmission electron microscopy (STEM) gives structural evidence that the ferroelectricity might originate from the vertical displacement of outmost Te atoms on the surface, breaking the inversion symmetry. Concurrently, electrical transport measurements reveal a metallic state with a carrier density on the order of 10$^{15}$ cm$^{-2}$ (or 10$^{22}$ cm$^{-3}$) -- comparable to that of Copper (Cu). Our findings establish a unique platform for exploring the interplay between ferroelectricity and an ultrahigh density of mobile carriers in the 2D limit.

cond-mat.mtrl-sci↗

arXiv2026

Superconductivity in non-centrosymmetric rhombohedral NbSe2

Crystal stacking offers a powerful yet underexplored route to engineer symmetry in layered superconductors. Here we report superconductivity in rhombohedral-stacked NbSe2 (3R-NbSe2), a non-centrosymmetric polytype in which global inversion symmetry is removed by stacking alone. Using comprehensive structural, transport, magnetic, and thermodynamic measurements, we establish superconductivity as a bulk property of the 3R phase and find that the in-plane upper critical field exceeds the Pauli paramagnetic limit, indicating the persistence of strong Ising-type spin-orbit coupling. Unlike the thickness-dependent superconductivity in centrosymmetric 2H-NbSe2, the superconducting transition temperature in 3R-NbSe2 shows little dependence on layer number but exhibits an unusually strong sensitivity to disorder. We further observe strongly enhanced nonlinear optical and electrical responses near the superconducting transition, consistent with stacking-induced inversion-symmetry breaking. Our results identify 3R-NbSe2 as a single-phase platform in which stacking engineering reshapes superconductivity and enables nonlinear transport phenomena in layered materials.

cond-mat.supr-con↗

arXiv2026

Decoupled interband pairing in a bilayer iron-based superconductor evidenced by ultrahigh-resolution ARPES

We present direct experimental evidence of a weakly coupled multiband superconducting state in the bilayer iron-based superconductor ACa$_2$Fe$_4$As$_4$F$_2$ (A = K, Cs) via ultrahigh-resolution angle-resolved photoemission spectroscopy (ARPES). Remarkably, the K-containing compound exhibits two distinct transition temperatures, corresponding to two separate sets of bilayer-split bands, as evidenced by temperature-dependent superconducting gap and spectral weight near the Fermi energy, while its Cs counterpart displays conventional single transition behavior. These experimental observations are well described by the weakly coupled two-band model of Eilenberger theory, which identifies suppressed interband pairing interactions between the bilayer-split bands as the key mechanism. By exploring quantum phenomena in the weak-coupling limit within a multiband system, our findings pave the way for engineering exotic superconductivity via band-selective pairing control.

cond-mat.supr-con↗

arXiv2025

From fractional Chern insulators to topological electronic crystals in moiré MoTe2: quantum geometry tuning via remote layer

The quantum geometry of Bloch wavefunctions,encoded in the Berry curvature and quantum metric, is believed to be a decisive ingredient in stabilizing fractional quantum anomalous Hall (FQAH) effect(i.e., fractional Chern insulator, FCI, at zero magnetic field), against competing symmetry-breaking phases.A direct experimental demonstration of quantum geometry-driven switching between distinct correlated topological phases, however, has been lacking. Here, we report experimental evidence of such a switch in a high-quality 3.7 twisted MoTe2 (tMoTe2) device consisting of both A-A bilayer and A-AB trilayer regions. While composite Fermi liquid CFL/FQAH phases are established in A-A tMoTe2,the A-AB region-effectively an A-A moire bilayer proximitized by a remote B layer-develops a series of topological electronic crystal (TEC, also referred to as generalized QAH crystal, QAHC) states with integer quantized Hall conductance at commensurate fractional fillings v=1/2, 2/3, and an incommensurate filling factor v=0.53.The electrostatic phase diagram is mapped out by combined transport and optical measurements, showing that these TEC states emerge within the first moir'e valence band prior to any charge transfer to the B layer. Exact diagonalization (ED) incorporating the remote-layer-induced intralayer potential demonstrates a transition from a CFL-like manifold in the A-A limit to a Chern number C=1 ground-state consistent with a TEC at v=1/2 , accompanied by the further breakdown of ideal band geometry. Our results provide experimental evidence of quantum geometry-tuned competition between FQAH/CFL and TEC phases in a moiré Chern band and pave the way for further exploring correlation-driven topological phenomena by tuning quantum geometry.

cond-mat.mes-hall↗

arXiv2025

Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices

Two-dimensional moiré superlattices have been extensively studied, and a variety of correlated phenomena have been observed. However, their lower-dimensional counterpart, one-dimensional (1D) moiré superlattices, remain largely unexplored. Electrons in 1D are generally described by Luttinger liquid theory, with universal scaling relations depending only on the Luttinger parameter g. In particular, at half-filling, Umklapp scattering plays a crucial role, as it can significantly change the conductance-temperature scaling relation and lead to Mott insulators. However, this prediction has never been observed since doping an empty band to half-filling was extremely difficult. Here, we show that the marriage of moiré superlattices and 1D electrons makes it possible to study the Luttinger liquid in an exceptionally wide filling region simply by electrical gating. We perform transport measurements on 1D moiré superlattices of carbon nanotubes on hexagonal boron nitride (hBN) substrates, and observe correlated insulating states at 1/4 and 1/2 fillings of the superlattice mini-band, where Umklapp scattering becomes dominant. We also observe a T-linear conductance at these commensurate fillings over a range of temperatures. Strikingly, the T-linear conductance leads to a strongly suppressed Luttinger parameter, suggesting a state of extreme correlation.

cond-mat.str-el↗

arXiv2025

A Convolutional Hierarchical Deep-learning Neural Network (C-HiDeNN) Framework for Non-linear Finite Element Analysis

We present a framework for the Convolutional Hierarchical Deep-learning Neural Network (C-HiDeNN) tailored for nonlinear finite element analysis. Building upon the structured foundation of HiDeNN, C-HiDeNN introduces a convolution operator to enhance numerical approximation. A distinctive feature of C-HiDeNN is its higher-order accurate approximation achieved through an expanded set of parameters, such as the polynomial order 'p,' dilation parameter 'a,' patch size 's,' and nodal position 'X'. These parameters function as the functional equivalents of weights and biases within each C-HiDeNN patch. In addition, C-HiDeNN can be selectively applied to regions requiring high resolution to adaptively improve local prediction accuracy. To demonstrate the effectiveness of this framework, we provide numerical examples in the context of nonlinear finite element analysis. The results show that our approach achieves significantly higher accuracy than conventional Finite Element Method (FEM) while substantially reducing computational costs.

math.NA↗

arXiv2025

WyckoffDiff -- A Generative Diffusion Model for Crystal Symmetry

Crystalline materials often exhibit a high level of symmetry. However, most generative models do not account for symmetry, but rather model each atom without any constraints on its position or element. We propose a generative model, Wyckoff Diffusion (WyckoffDiff), which generates symmetry-based descriptions of crystals. This is enabled by considering a crystal structure representation that encodes all symmetry, and we design a novel neural network architecture which enables using this representation inside a discrete generative model framework. In addition to respecting symmetry by construction, the discrete nature of our model enables fast generation. We additionally present a new metric, Fréchet Wrenformer Distance, which captures the symmetry aspects of the materials generated, and we benchmark WyckoffDiff against recently proposed generative models for crystal generation. As a proof-of-concept study, we use WyckoffDiff to find new materials below the convex hull of thermodynamical stability.

cond-mat.mtrl-sci↗

arXiv2025

Large language model-empowered next-generation computer-aided engineering

Software development has entered a new era where large language models (LLMs) now serve as general-purpose reasoning engines, enabling natural language interaction and transformative applications across diverse domains. This paradigm is now extending into computer-aided engineering (CAE). Recent applications of LLMs in CAE have successfully automated routine tasks, including CAD model generation and FEM simulations. Nevertheless, these contributions, which primarily serve to reduce manual labor, are often insufficient for addressing the significant computational challenges posed by large-scale, high-dimensional systems. To this aim, we first introduce the concept of LLM-empowered CAE agent, where LLMs act as autonomous collaborators that plan, execute, and adapt CAE workflows. Then, we propose an LLM-empowered CAE agent for data-free model order reduction (MOR), a powerful yet underused approach for ultra-fast large-scale parametric analysis due to the intrusive nature and labor-intensive redevelopment of solvers. LLMs can alleviate this barrier by automating derivations, code restructuring, and implementation, making intrusive MOR both practical and broadly accessible. To demonstrate feasibility, we present an LLM-empowered CAE agent for solving ultra-large-scale space-parameter-time (S-P-T) physical problems using Tensor-decomposition-based A Priori Surrogates (TAPS). Our results show that natural language prompts describing parametric partial differential equations (PDEs) can be translated into efficient solver implementations, substantially reducing human effort while producing high-fidelity reduced-order models. Moreover, LLMs can synthesize novel MOR solvers for unseen cases such as nonlinear and high-dimensional parametric problems based on their internal knowledge base. This highlights the potential of LLMs to establish the foundation for next-generation CAE systems.

cs.CE↗

arXiv2025

Structural contribution to light-induced gap suppression in Ta$_2$NiSe$_5$

An excitonic insulator is a material that hosts an exotic ground state, where an energy gap opens due to spontaneous condensation of bound electron-hole pairs. Ta$_2$NiSe$_5$ is a promising candidate for this type of material, but the coexistence of a structural phase transition with the gap opening has led to a long-standing debate regarding the origin of the insulating gap. Here we employ MeV ultrafast electron diffraction to obtain quantitative insights into the atomic displacements in Ta$_2$NiSe$_5$ following photoexcitation, which has been overlooked in previous time-resolved spectroscopy studies. In conjunction with first-principles calculations using the measured atomic displacements, we find that the structural change can largely account for the photoinduced reduction in the energy gap without considering excitonic effects. Our work illustrates the importance of a quantitative reconstruction of individual atomic pathways during nonequilibrium phase transitions, paving the way for a mechanistic understanding of a diverse array of phase transitions in correlated materials where lattice dynamics can play a pivotal role.

cond-mat.mtrl-sci↗

arXiv2025

In-Plane Magnetic Anisotropy and Large topological Hall Effect in Self-Intercalated Ferromagnet Cr1.61Te2

Self-intercalated chromium tellurides Cr1+xTe2 have garnered growing attention due to their high-temperature ferromagnetism, tunable spin structures and air stability, all of which are vital for versatile applications in next-generation memory and information technology. Here, we report strong magnetic anisotropy and a large topological Hall effect (THE) in self-intercalated Cr1.61Te2 single crystals, which are both highly desirable properties for future spintronic applications. Our results demonstrate that Cr1.61Te2 is a soft ferromagnet with strong in-plane magnetic anisotropy. Remarkably, distinct THE behaviors are observed in different temperature regimes, reflecting the intricate spin structures and competing exchange interactions. More interestingly, a large topological Hall resistivity, induced by microscopic non-coplanar spin structures, emerges in the temperature range 70-240 K, reaching a maximum value of 0.93 μΩ cm at 150 K. Moreover, a sign-reversed and weak THE is observed at low temperatures below ~70 K, indicating the emergence of an additional topological spin structure with opposite topological charges. This work not only offers valuable insights into the correlation between magnetocrystalline anisotropy and topological phenomena in Cr1+xTe2 systems, but also provides a robust platform for engineering the evolution of complex spin textures that can be leveraged in diverse spintronic device applications.

cond-mat.mtrl-sci↗

arXiv2025

Evidence of competing ground states between fractional Chern insulator and antiferromagnetism in moiré MoTe2

Two-dimensional moire materials present unprecedented opportunities to explore quantum phases of matter arising from the interplay of band topology and strong correlations.One of the most striking examples is the recent observation of fractional quantum anomalous Hall (FQAH) effect in twisted bilayer MoTe$_2$ (tMoTe2) with relatively large twist angles(~3.7deg-3.9deg). The electronic ground states are usually expected to be sensitive to the twist angle, as the twist angle determines the electron bandwidth and correlation strength in the moire system. Here, we report the observation of unexpected competing magnetic ground states in tMoTe2 moire superlattice, on which balance can be tipped by both twist angle and electric field (E). Specifically, we observed anomalous antiferromagnetic (AFM) ground states with zero Hall resistance at both v_h=1 and 2/3, at intermediate twist angles ~3deg. The AFM orders are suppressed by applying vertical E, and emergent ferromagnetism accompanied by integer Chern insulator (ICI) or fractional Chern insulator (FCI) states are observed near the critical E (E_c) of moire superlattice symmetry transition. Our results demonstrate tMoTe2 as a fascinating platform for exploring unexpected correlated phases with nontrivial topology and fractional excitations and point to electric-field-controlled ultralow-power spin-valleytronic devices.

cond-mat.mes-hall↗

arXiv2025

Fluctuated lattice-driven charge density wave far above the condensation temperature in kagome superconductor KV$_3$Sb$_5$

The kagome material AV$_3$Sb$_5$ exhibits multiple exotic orders, including an unconventional charge density wave (CDW). Elucidating the underlying mechanism behind the CDW transition is crucial for unraveling the complex interactions among these phases. However, the driving force of the CDW remains a topic of debate due to the intertwined interactions among the system's various excitations. Here we investigated the CDW transition in KV$_3$Sb$_5$ by isolating the ultrafast electronic phase transition using time- and angleresolved photoemission spectroscopy. An ultrafast electronic phase transition was observed at a critical photoexcitation fluence, F$_c$, without reduction in CDW lattice-distortion-induced band folding. This folded band persisted up to 150 K under equilibrium heating, well above the CDW condensation temperature of T$_c$ = 78 K. Notably, the pump-induced band shifts at F$_c$ were comparable to those caused by thermal effects at T$_c$. These findings suggest that in KV$_3$Sb$_5$, a fluctuating lattice-driven in-plane CDW emerges above 150 K, with out-of-plane electronic correlations leading to the $2\times2 \times 2$ CDW near T$_c$, offering key insights into the interplay between the electronic and structural dynamics in AV$_3$Sb$_5$.

cond-mat.str-el↗

arXiv2025

Tensor-decomposition-based A Priori Surrogate (TAPS) modeling for ultra large-scale simulations

A data-free, predictive scientific AI model, Tensor-decomposition-based A Priori Surrogate (TAPS), is proposed for tackling ultra large-scale engineering simulations with significant speedup, memory savings, and storage gain. TAPS can effectively obtain surrogate models for high-dimensional parametric problems with equivalent zetta-scale ($10^{21}$) degrees of freedom (DoFs). TAPS achieves this by directly obtaining reduced-order models through solving governing equations with multiple independent variables such as spatial coordinates, parameters, and time. The paper first introduces an AI-enhanced finite element-type interpolation function called convolution hierarchical deep-learning neural network (C-HiDeNN) with tensor decomposition (TD). Subsequently, the generalized space-parameter-time Galerkin weak form and the corresponding matrix form are derived. Through the choice of TAPS hyperparameters, an arbitrary convergence rate can be achieved. To show the capabilities of this framework, TAPS is then used to simulate a large-scale additive manufacturing process as an example and achieves around 1,370x speedup, 14.8x memory savings, and 955x storage gain compared to the finite difference method with $3.46$ billion spatial degrees of freedom (DoFs). As a result, the TAPS framework opens a new avenue for many challenging ultra large-scale engineering problems, such as additive manufacturing and integrated circuit design, among others.

cs.CE↗